A(III)-B(V)-Publikationen unter Beteiligung
des AK Halbleiterchemie ab 1970
P.KRAMER, W.SCHMIDT, G.KNOBLOCH, E.BUTTER Plättchenförmiges Wachstum von GaAs im Ga/H2/AsCl3-System Kristall & Technik 5 (1970) 523
E.BUTTER Überblick über Verfahren zur Darstellung epitaktischer Schichten von GaAs Wiss.Z.KMU Leipzig, Math.-Naturwiss.R. 20 (1971) 235 H.-J.TIETZE, R.ANDRAE, E.BUTTER Zum Wachstum von A(III)-B(V)-Halbleitern aus nichtstöchiometrischen Schmelzen (I) Kristall & Technik 6 (1971) 747
R.ANDRAE, E.BUTTER Thermodynamische Berechnungen des Systems Ge/H2O/H2 und experimentelle Untersuchungen mit der Nahabstandsanordnung Kristall & Technik 7 (1972) 581 V.GOTTSCHALCH, W.-H.PETZKE, E.BUTTER Ätzuntersuchungen an Verneuilspinellen Kristall.& Technik 7 (1972) 1007
K.JACOBS, B.JACOBS, E.BUTTER Zum Wachstum von AIII- BV-Halbleitern aus nichtstöchiometrischen Schmelzen Kristall & Technik 7 (1972) 1209 E.BUTTER, B.JACOBS, K.JACOBS, K.UNGER, A.ZEHE Local Scanning of the Emission Delay Time of Epitaxial (GaAl)As/GaAs Luminescence Diodes phys.stat.sol. (a) 12 (1972) K111
K.JACOBS, A.ZEHE Experimentierhalter für Lumineszenzdioden Experimentelle Technik d.Physik XXI (1973) 181 P.FUCHS, K.JACOBS, A.ZEHE Polarkoordinatenvorsatz für Kompensationsbandschreiber Experimentelle Technik d.Physik XXI (1973) 167
A.ZEHE, K.JACOBS Annealing Dependent far Field of GaAs-(GaAl)As LEDs Czech.J.Phys. B23 (1973) 567 W.-H. PETZKE, V.GOTTSCHALCH, E.BUTTER Die autoepitaktische Abscheidung von GaAs im System Ga(CH3)3-AsH3-H2 Kristall. & Technik 8 (1973) 177
G.KNOBLOCH, P.KRAMER, E.BUTTER Ein eindimensionales Modell zur Beschreibung von Transporteigenschaften im offenen System Kristall & Technik 8 (1973) 409 E.BUTTER, R.GÜNTHER, B.JACOBS, K.JACOBS, P.STREUBEL, A.ZEHE Ätzuntersuchungen an natürlichen Spaltflächen von (GaAl)As/GaAs-Heterostrukturen Kristall & Technik 8 (1973) 1021
H-J.TIETZE, E.BUTTER Zum Wachstum von AIII-BV-Verbindungen aus nichtstöchiometrischen Schmelzen Kristall & Technik 8 (1973) 1303 V.GOTTSCHALCH, W.-H.PETZKE, E.BUTTER Epitaktische Abscheidung von GaAs im System Ga(CH3)3-AsH3-H2 (I); Autoepitaktische Abscheidung Kristall.& Technik 9 (1974) 209
P.STREUBEL, G.MARTIUS, K.JACOBS Quantitative Bestimmung der Zusammensetzung von GaAlAs-Epitaxieschichten mit der ESMA Kristall & Technik 9 (1974) 227
V.GOTTSCHALCH, W.-H.PETZKE, E.BUTTER Epitaxial Deposition of GaAs in the Ga(CH3)3-AsH3-H2 System (II); Investigations on the Hetero-Epitaxy of GaAs on Ge Kristall & Technik 9 (1974) 355
W.-H.PETZKE, V.GOTTSCHALCH, E.BUTTER Epitaxial Deposition of GaAs in the Ga(CH3)3-AsH3-H2 System (III); Heteroepitaxy on Isolating Substrates Kristall & Technik 9 (1974) 477 W.-H.PETZKE, V.GOTTSCHALCH, E.BUTTER Epitaxial Deposition of GaAs in the Ga(CH3)3-AsH3 -H2 System (IV); Thermodynamic and Kinetic Considerations Kristall & Technik 9 (1974) 763
H.-J.TIETZE, U.SCHÖNFELD, E.BUTTER Vergleich des Wachstums von GaAs aus Zinn mit dem Wachstum aus Gallium Kristall & Technik 9 (1974) 887 W.SEIFERT, A.TEMPEL Zur Epitaxie von GaN auf Korund im System GaCl/NH3/Ar Kristall & Technik 9 (1974) 1213
W.SEIFERT, A.TEMPEL Cubic Phase GaN by CVD phys.stat.sol. (a) 23 (1974) K39 H.NEUMANN, W.SEIFERT, M.STAUDTE, A.ZEHE Influence of Growth Temperature and Substrate Material on the Properties of Epitaxial GaN Kristall & Technik 9 (1974) K69
K.JACOBS, B.JACOBS, P.STREUBEL, E.BUTTER Information about the Growth Process from Aluminium Concentration Profiles in Ga1-xAlxAs Liquid Phase Epitaxial Layers Kristall & Technik 9 (1974) 1243 A.ZEHE, E.BUTTER Observation of Negative Differential Resistance in GaInAs Light-Emitting Diodes phys.stat.sol. (a) 25 (1974) K137
A.ZEHE, W.-H.PETZKE Variation of CL with Growth Conditions of Pyrolytically Deposited GaN phys.stat.sol. (a) 25 (1974) K159 E.BUTTER, B.JACOBS, J.STARY LPE-Growth of InAs on GaAs-Substrates phys.stat.sol. (a) 26 (1974) K105
H.NEUMANN, U.FLOHRER, D.SUTTER, R.REPPIN, K.JACOBS, G.KÜHN Donatorionisierungsenergien in AlGaAs-Mischkristallen Exp. Technik d.Physik XXIII (1975) 41 B.JACOBS, K.JACOBS, A.ZEHE Heterojunturas de GaAlAs/GaAs con emision infrarroja de alto poder radiante Revista Mexicana de Fisica 24 (1975) 41
W.-H.PETZKE, A.ZEHE Lumineszenzeigenschaften von pyrolytisch abgeschiedenem GaN Kristall & Technik 10 (1975) 135 A.ZEHE, E.BUTTER, B.JACOBS, J.STARY Optical Properties of GaInAs LPE-Layers and p-n Structures Kristall & Technik 10 (1975) 147
A.ZEHE, W.SEIFERT Indirect Electron Beam Excitation of Ruby by GaN Recombination Radiation phys.stat.sol. (a) 31 (1975) K141 H.NEUMANN, K.JACOBS, R.REPPIN, E.BUTTER, H.SOBOTTA, M.STAUDE Properties of Liquid Phase Epitaxial GaAs Grown from Tin Solution phys.stat.sol. (a) 32 (1975) 497
H.NEUMANN, M.STAUDTE, E.BUTTER, J.STARY Electron and Hole Mobilities in InGaAs phys.stat.sol. (a) 27 (1975) K9 E.BUTTER, B.JACOBS, H.KRÄMER, W.SCHMIDT, J.STARY, W.WOLFF Zur Realstruktur von InGaAs LPE-Schichten Kristall & Technik 10 (1975) 553
G.KNOBLOCH Phase Equilibria in the Ga-P System Kristall & Technik 10 (1975) 605 A.TEMPEL, W.SEIFERT, J.HAMMER, E.BUTTER Zur Epitaxie von Galliumnitrid auf nichtstöchiometrischem Spinell im System GaCl/NH3/He Kristall & Technik 10 (1975) 747
A.TEMPEL, W.SEIFERT Nachweis von Stapelfehlern in GaN-Epitaxieschichten mittels Elektronenbeugung Kristall & Technik 10 (1975) 741 |
| 1976
H.RENTSCH, G.KÜHN, A.LEONHARDT, V.GOTTSCHALCH, E.BUTTER Das quaternäre Schmelzdiagramm Ga-As-P-Sn Kristall.& Technik 11 (1976) 133 E.BUTTER Zur Herstellung epitaktischer GaN-Schichten Proceedings Int. Conf. Novosibirsk 1975
K.JACOBS, R.REPPIN, E.BUTTER, H.NEUMANN Zur Darstellung von GaAs mit der LPE Proceedings Int. Conf. Novosibirsk 1975 K.JACOBS Physico-chemical problems of doping in the solution growth of GaAs and GaP Cetniewo 1976
R.FLAGMEYER, V.GEIST, W.SEIFERT Untersuchungen von GaN-Epitaxieschichten mit ionometrischen Methoden Kristall & Technik 11 (1976) 303 H.-G.BRÜHL, U.CAMPE, W.SCHMIDT, W.SEIFERT Sign of crystallographic polarity of epitaxial (0001) GaN layer grown of Sapphire substrates Kristall & Technik 11 (1976) K17
H.NEUMANN, H.-G.ERNST, E.BUTTER, P.KRAMER, W.KOHL Electrical Properties of Liquid Phase Epitaxial GaP Grown from Tin Solution phys.stat.sol. (a) 43 (1977) K95 V.GOTTSCHALCH, E.BUTTER Zu einigen Problemen der Heteroepitaxie von A(III)B(V)Verbindungen Proc.Berg- und Hüttenmännischer Tag, Freiberg 1977
H.NEUMANN, K.JACOBS, NGUYEN VAN NAM, W.KOJ, C.KRAUSE Properties of LPE Ge-doped GaAs phys.stat.sol. (a) 44 (1977) 675 H.ROSIN, G.FREYDANK, R.KLEIN, M.BRUCHHOLZ, V.GOTTSCHALCH Reveal of Dislocation Etch Pits on (001) GaP with Hot Phosphoric Acid phys.stat.sol. (a) 44 (1977) K 13
R.SCHWABE, F.THUSELT, R.BINDEMANN, W.SEIFERT, K.JACOBS Radiative Recombination from Electron-Hole Drops in N-doped GaP physics letters 64A (1977) 226 G.KNOBLOCH, E.BUTTER, S.REIFFARTH Die Anwendung des Krupkowski-Modells auf das System Ga-As Z.phys.Chemie 259 (1978) 667
H.NEUMANN, E.BUTTER, P.KRAMER, W.KOHL, H.-G.ERNST Impurity Band Conduction Effects in Liquid Phase Epitaxial Te-Doped GaP Grown from Tin Solution Kristall & Technik 13 (1978) 377 B.JACOBS, E.BUTTER, B.DOBNER LPE-Growth of InP on GaAs Kristall & Technik 13 (1978) 383
V.GOTTSCHALCH, P.KRAMER, E.BUTTER Untersuchungen zur heteroepitaktischen Abscheidung von GaP auf GaAs aus der Sn-Lösung Kristall & Technik 13 (1978) 543 V.GOTTSCHALCH, E.BUTTER, K.JACOBS, P.KRAMER Liquid Phase Epitaxial Deposition of GaP on GaAs J.Cryst.Growth 44 (1978) 157
E.BUTTER Halbleitermaterial für die Elektrolumineszenz Mitteilungsblatt der Chem. Gesellschaft Heft 5 (1978) 97 A.TEMPEL, W.SEIFERT, U.WALTER, C.NAGEL, H.NEELS Zum Anfangswachstum von Galliumnitrid auf isolierenden Substraten Commun.Dep.Chem.,Bulg.Acad.Sci. 11 (1978) 370
H.NEUMANN, B.JACOBS Electrical properties of liquid phase epitaxial InP grown from Tin solutions phys.stat.sol. (a) 49 (1978) K139 G.-P.PEUSCHEL, R.APELT, G.KNOBLOCH, E.BUTTER Thermodynamische Studien an AIII-BV-Verbindungen Kristall & Technik 14 (1979) 409
H.-G.BRÜHL, K.JACOBS, W.SEIFERT, J.MAEGE Precision Lattice Parameter Measurements on Te-Doped VPE GaP Layers Kristall & Technik 14 (1979) K27
V.GOTTSCHALCH, W.HEINIG, E.BUTTER, H.ROSIN, G.FREYDANK H3PO4-Etching of (001)-Faces of InP, (GaIn)P, GaP and Ga(AsP) Kristall & Technik 14 (1979) 563
K.LÖSCHKE, V.GOTTSCHALCH, K.JACOBS, A.TEMPEL The Applicability of Light-Microscopical Methods for the Investigation of Dislocation Structure in Semiconductors Krist. & Technik 14 (1979) 887 V.GOTTSCHALCH Structural Etching of (001) and (110) Faces of Various A(III) B(V) Compounds Krist. & Technik 14 (1979) 939
V.GOTTSCHALCH Structural Etching of (001) and (110) Faces of Various A(III) B(V) Compounds Proc.Recon 79, Prag 1979 E.BUTTER, G.FITZL, G.LEONHARDT, D.HIRSCH, W.SEIFERT, G.PRESCHEL The Deposition Group III Nitrides on Silicon Substrates Thin Solid Films 59 (1979) 25
H.NEUMANN, E.BUTTER, P.KRAMER, H.G.ERNST, W.KOHL Simultaneous Doping of GaP with Sn and Zn phys.stat.sol. (a) 55 (1979) 99 T.HÄNSEL, H.-G.BRÜHL, R.LINDEMANN, W.SEIFERT, K.JACOBS Determination of N-Concentration in GaP Epitaxial Layers by Two Independent Methods Kristall & Technik 14 (1979) 977
W.SEIFERT, H.-G.BRÜHL, G.FITZL Variation of Lattice Parameters with Growth Conditions in GaN phys.stat.sol. (a) 61 (1980) 493 G.FITZL, A.TEMPEL, W.SEIFERT, E.BUTTER Epitaxial Growth of GaN on {1012} oriented Sapphire in GaCl/NH3/He and GaCl/NH3/H2 Systems Kristall & Technik 15 (1980) 1143
K.JACOBS, W.SEIFERT The influence of ammonia of the growth rate in the VPE of GaP J.Cryst.Growth 50 (1980) 702 I.WILKE, R.SCHWABE, R.BINDEMANN, K.JACOBS, W.SEIFERT Luminescence from an Electron-Hole Liquid in the Indirect Compound GaAsP phys.stat.sol. (b) 101 (1980) 541
V.GOTTSCHALCH, G.WAGNER, M.PASEMANN Defect Structure of (001) VPE GaP Layers Extended Abstracts, 6. International conference on crystal growth, Moscow 1980 H.NEUMANN, A.MÜLLER, V.GOTTSCHALCH Doping Behaviour of Te in In1-xGaxAs Liquid Phase Epitaxial Layers phys.stat.sol. (a) 61 (1980) 463
W.SEIFERT, G.FITZL, E.BUTTER Study on the Growth Rate in VPE of GaN J.Cryst.Growth 52 (1981) 257 G.-P.PEUSCHEL, G.KNOBLOCH, E.BUTTER, R.APELT Thermodynamic Studies on Ternary Mixed III-V-Systems Cryst.Res.Techn. 16 (1981) 13
K.JACOBS, G.-P.PEUSCHEL,R.PROBST, E.BUTTER, F.BUGGE Experimental Determination and Thermodynamic Calculations of the Relationship between Vapour Phase Composition and Mixed Crystal Composition ... Cryst.Res.Techn. 16 (1981) 681 V.GOTTSCHALCH, G.WAGNER, M.PASEMANN Etch and Transmission Electron Microscope Investigations of Microdefects in (001) LEC GaP Substrates Cryst.Res. Technol. 16 (1981) 1001
G.WAGNER, V.GOTTSCHALCH, M.PASEMANN Microdefects in LEC GaP and Generation of Dislocation in Homoepitaxial Layers Acta Physica Academiae Scientiarum Hungaricae 51 (1981) 391 K.MÜLLER, W.MOTHES, B.JACOBS, E.BUTTER Ge Incorporation in GaInAs LPE Layers and GaAs Bulk Crystals Cryst.Res.Techn. 17 (1982) 841
K.MÜLLER, R.APELT, B.JACOBS, E.BUTTER Melting Diagrams of the Quaternary Systems Ga-In-As-Ge and Ga-In-As-Sn Cryst.Res.Techn. 17 (1982) 1227 G.WAGNER, V.GOTTSCHALCH, M.PASEMANN Influence of Microdefects on the Generation of Dislocations in Homoepitaxial GaP Layers Grown on LEC Substrates Cryst.Res.& Technol. 17 (1982) 57
V.GOTTSCHALCH, R.SRNANEK, G.WAGNER Detection of lattice defects in InP and (InGa)As using selective photoetching J.Mater.Sci.Letters 1 (1982) 358 K.JACOBS A kinetic model for the incorporation of dopants during vapor phase epitaxy of III-V-compounds J.Cryst.Growth 56 (1982) 362
V.GEIST, C.ASCHERON, V.GOTTSCHALCH Determination of the Crystallographic Polarity of {111}-InP Crystals by the Kossel Technique and Chemical Etching Cryst.Res.& Technol. 18 (1983) K 98 G.KNOBLOCH, R.APELT, E.BUTTER Krupkowski's Formalism and the Stability Condition for Homogeneous Phases Cryst.Res.Techn. 18 (1983) K73
W.SEIFERT, R.FRANZHELD, E.BUTTER, H.SOBOTTA, V.RIEDE On the Origin of Free Carriers in High-Conducting n-GaN Cryst.Res. Technol. 18 (1983) 383
U.PIETSCH, J.BAK-MISICH, V.GOTTSCHALCH The Linear Thermal Expansion Coefficent of a GaxIn1-xAsyP1-y Layer on InP:Sn Substrate phys.stat.sol. (a) 82 (1984) K 137
W.SEIFERT, S.SCHWETLICK, J.REINHOLD, E.BUTTER A Quantum Chemical Study of Chlorine Desorption by Hydrogen in the VPE of GaAs J.Cryst.Growth 66 (1984) 333 R.PICKENHAIN, K.JACOBS, W.SEIFERT, V.CHERNYI, S.BREHME Green and Yellow Light Emitting Diodes Produced from Vapour Phase Epitaxial GaP:N I. Deep Levels in Diodes Produced by either Diffusion or Implantation of Zinc phys.stat.sol.(a) 85 (1984) 627 K.JACOBS, I.SIMON, F.BUGGE, E.BUTTER A simple method for calculation of the composition of VPE grown GaxIn1-xAs layers as a function of growth parameters J.Cryst.Growth 69 (1984) 155
G.KNOBLOCH, U.MEIER, E.BUTTER Phase equilibria in the GaAs-HCl-H2-System J.Cryst.Growth 66 (1984) 338 G.KNOBLOCH, V.GOTTSCHALCH The determination of Liquidus Data in the In-As System Cryst.Res.Technol. 20 (1985) 1205
S.SCHWETLICK, W.SEIFERT, E.BUTTER Growth Mechanism in GaAs-VPE at Low Deposition Temperature Cryst.Res.Technol. 20 (1985) 431 W.SEIFERT, K.JACOBS, R.PICKENHAIN, G.BIEHNE A Correlation between Concentration of Deep Levels and Growth Conditions for VPE-GaP Cryst.Res. Technol. 20 (1985) 625
R.PICKENHAIN, V.GEIST, W.SEIFERT, K.JACOBS Green and Yellow Light Emitting Diodes Produced from VPE GaP:N (II) phys.stat.sol. (a) 88 (1985) 721
R.SCHWABE, W.SEIFERT, F.BUGGE, R.BINDEMANN, V.F.AGEKYAN, S.V.POGAREV Photoluminescence of Nitrogen-doped VPE GaAs Solid State Commun.55 (1985) 167
G.WAGNER, V.GOTTSCHALCH Helical dislocations in Sn-doped GaP epitaxial layers and their characterization by transmission electron microscopy Phil.Mag. 52 (1985) 395
|
| 1986
W.BOTH, V.GOTTSCHALCH, G.WAGNER Thermal Resistivity of InGaAsP Alloy. Experimental Results Cryst.Res. Technol. 21 (1986) K 85
R.SCHWABE, A.HAUFE, V.GOTTSCHALCH, K.UNGER Photoluminescence of heavily doped n-InP Solid State Commun. 58 (1986) 485
G.WAGNER, V.GOTTSCHALCH Defects in LEC - grown InP Crystals Doped with Tin Cryst.Res. Technol. 21 (1986) 881 V.RIEDE, H.NEUMANN, H.SOBOTTA, R.SCHWABE, W.SEIFERT, S.SCHWETLICK The Localized Vibrational Mode of Nitrogen in GaAs phys.stat.sol.(a) 93 (1986) K 151
R.FRANZHELD, W.SEIFERT, E.BUTTER Influence of Predeposition on the Properties of GaN Cryst.Res. Technol. 21 (1986) 951 R.FRANZHELD, H.SOBOTTA, W.SEIFERT, E.BUTTER Carrier Concentration Profile of GaN Layers by Using Additional Dried NH3 Cryst.Res. Technol. 21 (1986) K 71
I.SIMON, K.JACOBS, E.BUTTER Thermodynamic Calculation of the Alloy Composition of GaxIn1-x As Grown in the Trichloride System Using Solid Sources Cryst.Res. Technol. 21 (1986) 217 W.SEIFERT, R.FRANZHELD, F.BÖNISCH, E.BUTTER Organometallic Vapour Phase Epitaxy of Galliumnitride Using Ga(CH3)3-N(CH3)3-Adduct Pyrolysis Cryst.Res.& Technol. 21 (1986) 9
S.SCHWETLICK, W.SEIFERT, E.BUTTER, W.HÖRIG, R.PICKENHAIN, R.SCHWABE Incorporation of Nitrogen into GaAs Grown by Chloride-VPE Cryst.Res.Technol. 22 (1987) 999 G.WAGNER, V.GOTTSCHALCH Revealing of Lattice Defects on (111)B-Faces of GaP and InP by Chemical Etching Cryst.Res. Technol. 23 (1988) 59 E.KURTH, A.REIF, V.GOTTSCHALCH, J.FINSTER, E.BUTTER Chemical Etching and Polishing of InP Cryst.Res. Technol. 23 (1988) 117
R.SRNANEK, A.SATKA, G.WAGNER, K.SEIDEL, V.GOTTSCHALCH Vysetrcvanie Krystalografickych Defektov v Polovodicovych Materialoch Pre Optoelelektroniku Proc. d. 1. Wiss. Konf. d.Elektrotechnischen Fakultät d. Slow. Techn. Hochschule, p.55 R.FLAGMEYER, V.GOTTSCHALCH, H.FREY Internal Distortion in InGaAsP Quaternary Alloys Studied by Ion Channeling phys.stat.sol. (a) 108, (1988) 123
W.SEIFERT Die Abscheidung dünner A(III)-B(V)-Schichtanordnungen durch Organometall-CVD Wiss.Z.KMU,Leipzig, Math.-Naturwiss.R. 37 (1988) 553 V.GOTTSCHALCH, B.RHEINLÄNDER, K.UNGER LPE-Darstellung und Charakterisierung von InGaAsP Schichtstrukturen Wiss.Z.d.KMU 37 (1988) 563
G.JOKUSZIES, R.FRANZHELD, W.SEIFERT, E.BUTTER Zur thermischen Stabilität des Trimethylgallium-Trimethylamin-Addukts Z.Chem. 28 (1988) 342 R.FLAGMEYER, V.GOTTSCHALCH InGaAsP Quaternary Layers on InP (100) Substrates Analysed by Ion Backscattering and Channeling Cryst.Res.Technol. 24 (1989) 331 V.GOTTSCHALCH Darstellung von (InGa)(AsP)/InP Schichtanordnungen mittels Flüssigphasenepitaxie Tagungsband "Schichtsysteme für zukünftige Bauelemente der Mikro, Opto, Bioelektronik und Optik", Karl-Marx-Stadt 1989 G.WAGNER, V.GOTTSCHALCH, H.RHAN, P.PAUFLER Pseudomorphic growth and nucleation of misfit dislocations in the epitaxial system (001) InP / In 1-xGa xAs Part I: Pseudomorphic growth, tetragonal distortion and lattice relaxation by dislocation nucleation phys.stat.sol. (a) 112 (1989) 519
G.WAGNER, V.GOTTSCHALCH, H.RHAN, P.PAUFLER Pseudomorphic growth and nucleation of misfit dislocations in the epitaxial system (001) InP / InP/In1-xGaxAs Part II: Critical thickness and dislocation motion phys.stat.sol. (a) 113 (1989) 71 U.MARECK, V.GOTTSCHALCH, E.BUTTER Wetting of InP by Indium and Indium-Tin-Melts Cryst.Res. Technol. 24 (1989) 887 G.OELGART, V.GOTTSCHALCH, H.HAEFNER, R.HEILMANN, W.KLEIN, B.RHEINLÄNDER Characterization of InGaAsP/InP Double Heterostructure Laser-Wafers phys.stat.sol. (a) 114 (1989) 419 W.SEIFERT, K.PLOSKA, S.SCHWETLICK, E.BUTTER Organometallic Vapour Phase Epitaxy of Galliumarsenide Using Ga(CH3)3-N(CH3)3-Adduct as Precursor Cryst.Res. Technol. 24 (1989) 29 S.SCHWETLICK, W.SEIFERT, J.REINHOLD, E.BUTTER Quantenchemische Untersuchungen zum Mechanismus der Chlor-Desorption durch molekularen Wasserstoff bei der VPE von Galliumarsenid im Chloridprozess Z.phys.Chem. 270 (1989) 177 S.SCHWETLICK, W.SEIFERT, R.PICKENHAIN, R.SCHWABE Reduced EL2 Concentration in MOCVD GaAs by Addition of NH3 During Growth J.Cryst.Growth 96 (1989) 378 V.GOTTSCHALCH, H.HERRNBERGER Revealing of lattice defects on (001) GaAs surfaces by KI : I :H2SO4 etchant J.Mater.Sci. 9 (1990) 7 V.GOTTSCHALCH, B.RHEINLÄNDER, G.OELGART, H.-G.BRÜHL, W.BAYER, G.SCHWARZ, K.VOGEL LPE Growth and Characterization of InP/InGaAsP/InP Ridge Waveguide Laser at 1.3 micrometer Cryst.Res.& Technol. 25 (1990) 637
V.GOTTSCHALCH, YONG SON PAK, H.HERRNBERGER, G.KNOBLOCH, E.BUTTER Epitaktisches Wachstum von GaAs aus GaxSn1-x-y AsyLösungen auf planaren und strukturierten Unterlagen Wiss.Z.d.KMU, Math. nat.wiss.Reihe 39 (1990) 353
G.WAGNER, G.ROHDE, V.GOTTSCHALCH, P.PAUFLER Generation of dislocation half loops as the initial stage of plastic deformation of heteroepitaxial In1-xGaxAs/InP layers Electron Microscopy in Plasticity and Fracture Research of Materials (Proc.Internat.Symp. Holzhau 1989), published in: Physical Research, Vol.14 (1990) 223, Akademie-Verlag X.LIU, M.-E.PISTOL, L.SAMUELSON, S.SCHWETLICK, W.SEIFERT Nitrogen pair luminescence in GaAs Appl.Phys.Lett. 56 (1990) 1451 H.-G.BRÜHL, T.BAUMBACH, V.GOTTSCHALCH, U.PIETSCH Extreme Asymmetric X-ray Bragg Reflection of Semiconductor Heterostructures Near the Edge of Total External Reflection J.Appl.Cryst. 23 (1990) 228 - 233 N.PUHLMANN, G.OELGART, V.GOTTSCHALCH, F.NEMITZ Minority Carrier Recombination and Internal Quantum Yield in GaAs:Sn by means of EBIC and CL Semicond. Sci. Technol. 6 (1991) 181 B.RHEINLÄNDER, A.KLEHR, O.ZIEMANN, V.GOTTSCHALCH, G.OELGART Room-Temperature Polarization Bistability in 1.3 micrometer InGaAsP/InP Ridge Waveguide Lasers Optics Communications 80 (1991) 259 V.GOTTSCHALCH, G.KNOBLOCH, E.BUTTER Saturation behaviour of In-Ga-As-melts and growth of In.53Ga.47As lattice matched to (001) InP substrates Cryst.Res.Technol. 26 (1991) 683 N.PUHLMANN, G.OELGART, V.GOTTSCHALCH Temperature Dependent Minority Carrier Recombination on GaAs:Sn phys.stat.sol. (a) 125 (1991) 731
B.P.KELLER, G.OELGART, R.PICKENHAIN, G.GRUMMT, W.SEIFERT MOVPE of InP Using Trimethylindium-Trimethylamine Adduct Cryst.Res. Technol. 26 (1991) 253 S.HAGEN, W.SEIFERT, E.BUTTER Evaporation Behaviour of TMIn-TMN Adduct Determined by Flame Ionization Detection Cryst.Res.Technol. 27 (1992) 111 H.SOBOTTA, H.NEUMANN, R.FRANZHELD, W.SEIFERT Infrared Lattice Vibration of GaN phys.stat.sol. (b) 174 (1992) K57 V.GOTTSCHALCH, R.FRANZHELD,S.KELLER, S.KRIEGEL, G.WAGNER, G.BENNDORF Influence of substrate misorientation on the In distribution coefficient of Ga x In 1-x P layers lattice matched to (100) GaAs grown by MOVPE Fifth European Workshop on MOVPE and Related Growth Techniques, Malmö Juni 1993, Booklet C4 B.P.KELLER, R.FRANZHELD, G. FRANKE, V.GOTTSCHALCH , R.SCHWABE, S.KELLER, U.DÜMICHEN Intramolecular and Intermolecular Alan-Adducts for the Growth of (AlGa)As by Atmospheric and Low Pressure MOVPE Inst. Phys.Conf.Ser. 136, GaAs and Rel. Comp., Freiburg 1993 10/661 T.CHASSE, R.FRANKE, C.URBAN, R.FRANZHELD, P.STREUBEL, A.MEISEL X-ray photoelectron spectroscopic core level shifts of phosphorus in phosphates and native oxide layers on InP (001). Application of Auger parameter concept J.Electron.Spectr.Rel.Phenom. 62 (1993) 287 H.SCHUMANN, O.JUST, S.NICKEL, R.WEIMANN, V.GOTTSCHALCH, B.P.KELLER, R.SCHWABE Synthesis, X-ray structure and application of bis[allylamin(dimethyl)gallium(III)] as a precursor for the growth of GaP-layers by MOVPE Advanced Materials 10 (1994) 767 S.BECHER, V.GOTTSCHALCH, G.WAGNER, R.SCHWABE, J.L.STAEHLI LPE Growth and Characterization of thin InGaAsP layers lattice matched to InP Cryst.Res. Technolgy 29 (1994) 945 S.BECHER, V.GOTTSCHALCH, G.WAGNER, R.SCHWABE, J.L.STAEHLI Characterization of lattice matched single InGaAsP QW grown by conventional LPE Semicond. Sci. Technol. 9 (1994) 1558 G.WAGNER, V.GOTTSCHALCH, R.FRANZHELD, S.KRIEGEL, P.PAUFLER Dislocations, Twins, and Cracks in In1-xGaxP/GaAs Heteroepitaxial Layers phys.stat.sol. (a) 146 (1994) 371
B.P.KELLER, S.KELLER, H.HERRNBERGER, J.LENZNER, S.NILSSON, W.SEIFERT Compositional gradients in InGaAs on patterned InP substrates grown by atmospheric-pressure metalorganic vapour -phase epitaxy J.Cryst.Growth 140 (1994) 33 G.ROSSETTO, A.CAMPORESE, M.L.FAVARO, D.AJO, G.TORZO, P.ZANELLA, A.CORRADO, F.DE ZUANE, M.PORCHIA, B.BALLARIN, R.FRANZHELD New Precursor for InP Growth via MOVPE: [Et2InNMe2]2 Syntheses and Methodologies in Inorganic Chemistry: New Compounds and Materials Vol. 4 (1994) 349 (Eds. S.Daolio, E.Tondello, P.A.Vigato: Ia Photograph Padova) A.CAMPORESE, A.CORRADO, G.ROSSETTO, M.PORCHIA, B.BALLARIN, G.TORZO, D.AJO, P.ZANELLA, R.FRANZHELD Diorganoindium Amides: New Precursors for MOVPE of InP Proc.of IV Scuola-Convegno su Sintesi e Metodologie Speciali in Chemica Inorganica - Applicazioni a Composti e Materiali Innovativi, Brixen 1.-4.121993 (1994) 97 M.SCHUBERT, V.GOTTSCHALCH, C.M.HERZINGER, H.YAO, P.G.SNYDER, J.A.WOOLLAM, Optical Constants of (GaIn)P lattice matched to GaAs J.Appl.Phys. 77 (1995) 3416
M.SCHUBERT, B.RHEINLÄNDER, V.GOTTSCHALCH Band-Gap Reduction and Valence Band Splitting in spontaneously ordered GaInP2 studied by Dark-Field Spectroscopy Solid State Communication 95 (1995) 723 R.SCHWABE, F.PIETAG, M.FAULKNER, S.LASSEN, V.GOTTSCHALCH, R.FRANZHELD, A.BITZ, J.L.STAEHLI Optical investigation on Isovalent delta-Layers in III-V Semiconductor Compounds J.Appl.Phys. 77 (1995) 6295 V.GOTTSCHALCH, R.SCHWABE, F.PIETAG, G,WAGNER, R.FRANZHELD, I.PIETZONKA, S.KRIEGEL, D.HIRSCH Organometallic vapour-phase growth of InAs monolayer structures on (001) GaAs Sixth European Workshop on MOVPE and Related Growth Techniques, Gent 1995, Workshop Booklet C8 D.ROSE, U.PIETSCH, V.GOTTSCHALCH, H.RHAN Investigation of InAs single quantum wells buried in GaAs [001] using grazing incidence x-ray diffraction J.Phys.D: Appl.Phys. 28 (1995) A246 B.RHEINLÄNDER, M.SCHUBERT, V.GOTTSCHALCH Dark-Field Spectroscopy on Ordered GaInP2 phys.stat.sol. (a) 152 (1995) 287 M.CERNIANSKY, J.KOVAC, V.GOTTSCHALCH, J.JAKABOVIC, J.SKRINIAROVA, L.JANOS 980-nm InAs/GaAs superlattice lasers for Erbium-doped fibre amplifieres European Optical Society, Photonics 95, Prague (1995),
I.PIETZONKA, D.HIRSCH, V.GOTTSCHALCH, R.SCHWABE, R.FRANZHELD, K.BENTE, F.BIGL Atomic Force Microscopy on (001) Surfaces of GaAs MOVPE Layers Advanced Materials, CVD C9 (1996) 44-48
J.KOVAC, F.UHEREK, A.SATKA, J.WACLAWEK, J.JAKABOVIC, R.SRNANEK, B.RHEINLÄNDER, V.GOTTSCHALCH, S.HASENÖHRL, J.NOVAK, P.BARNA, A.BARNA, J.WOOD InAlGaAs-InGaAs-InP RCE PIN Photodiode for 1300nm Wavelength Region Indium Phosphide and Related Materials, Schwäbisch Gmünd, 21.-25.04.1996,TuP-C19, 219-222 A.SATKA, D.W.E.ALLSOPP, J.KOVAC, F.UHEREK, B.RHEINLÄNDER, V.GOTTSCHALCH Design of InGaAs/InAlGaAs/InP RCE PIN photodiode in Heterostructure Epitaxy and Devices, edited by J.Novak and A.Schlachetzki, NATO ASI Series Vol. 3/11, p. 301-304, Dordrecht 1996 R.REDHAMMER, J.KOVAC, S.NEMETH, V.GOTTSCHALCH, B.RHEINLÄNDER, A.KOVACIK, J.SKRINIAROVA AlAs and GaInP Potential Barrier Photodetector Grown on Vicinal Surfaces in Heterostructure Epitaxy and Devices, edited by J.Novak and A.Schlachetzki, NATO ASI Series Vol. 3/11, p. 293-296, Dordrecht 1996 M.CERNIANSKY, J.KOVAC, V.GOTTSCHALCH MOCVD growth and characterization of InAs/GaAs superlattices in Heterostructure Epitaxy and Devices, edited by J.Novak and A.Schlachetzki, NATO ASI Series Vol. 3/11, p. 87..90, Dordrecht 1996 L.STUCHLIKOVA, L.HARMATHA, J.KOVAC, A.KOVACIK, V.GOTTSCHALCH, B.RHEINLÄNDER Investigation of a GaAs Heterostructure with an AlAs Potential Barrier by DLTS Measurements in Heterostructure Epitaxy and Devices, edited by J.Novak and A.Schlachetzki, NATO ASI Series Vol. 3/11, p. 95-98, Dordrecht 1996
neue Suche ? F.UHEREK, A.SATKA, J.KOVAC, J.JAKABOVIC, R.SRNANEK, J.BORGULOVA, V.GOTTSCHALCH, S.HASENÖHRL, B.RHEINLÄNDER RCE PIN photodiodes for 1300 nm wavelength Proc.Inter.Conf. Advanced Semiconductor Devices and Microsystems, October 20-24,1996, Smolenice, p. 117-120
M.SCHUBERT, B.RHEINLÄNDER, I.PIETZONKA, V.GOTTSCHALCH, J.A.WOOLLAM Band-gap reduction and valence-band splitting of ordered (AlGa)InP studied by dark-field spectroscopy and generalized ellipsometry 23rd Inter.Conf. The Physiks of Semiconductors, Berlin, Juli 21-26, 1996, Volume 1, p.473-476 F.PIETAG, A.TCHOUASSI, I.PIETZONKA, V.GOTTSCHALCH, R.SCHWABE, A.BITZ, J.L.STAEHLI Type II GaAs quantum islands embedded in AlAs: Growth peculiarities and optical properties 23rd Inter.Conf. The Physiks of Semiconductors, Berlin, Juli 21-26, 1996, Volume 2, p.1325-1328 B.RHEINLÄNDER, V.GOTTSCHALCH, J.KOVAC, F.UHEREK , A.SATKA, S.HASENÖHRL, P.BARNA, A.BARNA, J.WOOD (Al,Ga)InAs-InP resonant-cavity structure for infrared region pin photodiodes 23rd Inter.Conf. The Physiks of Semiconductors, Berlin, Juli 21-26, 1996, Volume 4, p.3239-3242
M.CERNIANSKI, J.KOVAC, V.GOTTSCHALCH Optical properties of MOCVD grown InAs/GaAs quantum wells Proc.3rd Bratislava Days on MBE, May 16-17, 1996, p.98-101
V.GOTTSCHALCH, R.FRANZHELD, I.PIETZONKA, R.SCHWABE, G.BENNDORF, G.WAGNER MOVPE growth of spontaneously ordered (GaIn)P and (AlIn)P layers lattice matched to GaAs substrates Cryst. Res. Technol. 32 (1997) 65-78
M.SCHUBERT, B.RHEINLÄNDER, E.FRANKE, I.PIETZONKA, J.SKRINIAROVA, V.GOTTSCHALCH
Direct-gap reduction and valence-band splitting of ordered indirect-gap
AlInP2 Phys.Rev.B 54 (1996) 17616-17619
V.GOTTSCHALCH, R.FRANZHELD, I.PIETZONKA, R.SCHWABE, G.BENNDORF, G.WAGNER MOVPE growth of spontaneously ordered (GaIn)P and (AlIn)P layers lattice matched to GaAs substrates Cryst. Res. Technol. 32 (1997) 69-82 F.FROST, K.OTTE, A.SCHINDLER, F.BIGL, G.LIPPOLD, V.GOTTSCHALCH Measurement of the depth distribution of ion beam etching-induced damage in AlGaAs/GaAs multiple quantum well structure Appl.Phys.Lett. 71(1997) 1362-1364 B.RHEINLÄNDER, H.SCHMIDT, V.GOTTSCHALCH Spectroscopic Ellipsometry on InAs Monolayers Embedded in GaAs Appl.Phys.Lett.70 (1997) 1736-1738 R.SCHWABE, F.PIETAG, V.GOTTSCHALCH, G.WAGNER, M.DI VENTRA, A.BITZ, J.L.STAEHLI Blue Luminescence from ultrathin GaAs layers embedded in AlAs Phys.Rev.B 56 (1997) R 4329-R4332 G.KIRPAL, M.GERHARDT, G.BENNDORF, R.SCHWABE, F.PIETAG, I.PIETZONKA, G.LIPPOLD, G.WAGNER, R.FRANZHELD, V.GOTTSCHALCH MOVPE growth and characterization of GaInAs(P) on (001) InP using diethyltertiarybutylarsine (DEtBAs) and tertiarybutylphosphine (TBP) as the group-V-sources J.Cryst.Growth 170 (1997) 167-172 J.WACLAWEK, J.KOVAC, B.RHEINLÄNDER, V.GOTTSCHALCH , J.SKRINIAROVA Electrically tunable GaAs/AlGaAs MQW RCE photodetector Electronics Letters 33 (1997) 71-72 I.PIETZONKA, R.FRANZHELD, T.SAß, G.BENNDORF, R.SCHWABE, V.GOTTSCHALCH MOVPE growth and characterization of (GaIn)P layers grown with different P-containing precursors 7th European Workshop on MOVPE and Related Growth Techniques, Workshop Booklet A10 (1997) K.OTTE, F.FROST, A.SCHINDLER, F.BIGL, G.LIPPOLD, R.FLAGMEYER, V.GOTTSCHALCH High Precision Depth Profiling of Argon and Nitrogen ion etching-induced damage in an AlGaAs/GaAs multiple quantum well structure Thin Solid Films 318 (1998) 132 - 135
G.KIRPAL, V.GOTTSCHALCH, R.FRANZHELD, M.GERHARDT, G.BENNDORF, R.SCHWABE, G.LIPPOLD, H.-C.SEMMELHACK MOVPE growth of (GaIn)As using As-precursors with different numbers of As-H functions 7th European Workshop on MOVPE and Related Growth Techniques, Workshop Booklet A11 (1997) V.GOTTSCHALCH, R.SCHWABE, G.WAGNER, R.FRANZHELD, I.PIETZONKA, F.PIETAG, J.KOVAC Metal-organic vapour-phase epitaxy of GaAs monolayers embedded in AlAs 7th European Workshop on MOVPE and Related Growth Techniques, Workshop Booklet E4 (1997) M.GERHARDT, G.KIRPAL, G.BENNDORF, R.SCHWABE, R.FRANZHELD, V.GOTTSCHALCH, M.DRUMINSKI Growth of 1.55 mm DH laser structures using different alternative group-V-sources 7th European Workshop on MOVPE and Related Growth Techniques, Workshop Booklet H12 (1997) L.C.ANDREANI, R.C.IOTTI, R.SCHWABE, F.PIETAG, V.GOTTSCHALCH, A.BITZ, J.-L.STAEHLI Minimum of oscillator strength of excitons in ultra-narrow GaAs/AlGaAs quantum wells: theory and experiment Proc. of the 8th Conf. On Modulated Semiconductor Structures (14. -18. July 1997, Santa Barbara, USA) J.WACLAWEK, J.KOVAC, B.RHEINLÄNDER, V.GOTTSCHALCH, J.SKRINIAROVA GaAs/AlGaAs based electrically tunable RCE photodiode The Second International Conference on Low Dimensional Structures , Lisbon, Portugal, 1997, Reference Manual F.PIETAG, R.SCHWABE, V.GOTTSCHALCH, M.DI VENTRA, A.BITZ, J.L.STAEHLI Ultrathin GaAs Layers embedded in AlAs: A Perspective for intense short Wavelength Light Emission? The Second International Conference on Low Dimensional Structures , Lisbon, Portugal, 1997, Reference Manual R.SCHWABE, V.GOTTSCHALCH, F.PIETAG, K.UNGER, M.DIVENTRA, A.BITZ, J.L.STAEHLI Ultrathin GaAs layers embedded in AlAs: The observation of intense short-wavelength emission phys.stat.sol. (a) 164 (1997) 165 - 168 R.PICKENHAIN, V.GOTTSCHALCH The Temperature Dependence of the Optical Absorption of an InAs-Monolayer Embedded in GaAs Measured by Means of Photocurrent phys.stat. sol. (a) 164 (1997) R3-R4
B.RHEINLÄNDER, J.BORGULOVA, J.KOVAC, V.GOTTSCHALCH, J.WACLAWEK Optical Polarization Spectroscopy on Quantum Confined Stark Effect in Resonant-Cavity AlGaAs/GaAs MQW Structures phys.stat.sol. (a) 164 (1997) 95 - 99
H.SCHMIDT, B.RHEINLÄNDER, A.KASIC, V.GOTTSCHALCH Dielectric Function Effects Due to Isovalent Monolayers of III-Elements Buried in GaAs, GaP and AlGaAs phys.stat.sol. (a) 164 (1997) 123 - 127
T.Saß, I.Pietzonka, R.Franzheld, V.Gottschalch, G.Wagner
The formation of domains and antiphase boundaries in
CuPB Inst. Phys. Conf. Ser. No 160 (1997) 377 - 380
F.FROST, K.OTTE, A.SCHINDLER, G.LIPPOLD, R.PICKENHAIN, V.GOTTSCHALCH, F.BIGL Depth profiling of defect distribution in an AlGaAs/GaAs multiple quantum well structure induced by low-energy ion beam etching Inst.Phys.Conf. Ser. No 160 (1997) 453-456
A.BITZ, M.DI VENTRA, A.BALDERESCHI, J.L.STAEHLI, F.PIETAG, V.GOTTSCHALCH, H.RHAN, R.SCHWABE
Optical properties of ultrathin GaAs layers embedded in
AlxGa1-x Phys.Rev. B 57 (1998) 2426-2430
K.OTTE, F.FROST, A.SCHINDLER, F.BIGL, G.LIPPOLD, R.FLAGMEYER, V.GOTTSCHALCH High Precision Depth Profiling of Argon and Nitrogen ion etching-induced damage in an AlGaAs/GaAs multiple quantum well structure Thin Solid Films 318 (1998) 132-135
H.SCHMIDT, B.RHEINLÄNDER, V.GOTTSCHALCH, G.WAGNER InP monolayers inserted in a GaP matrix studied by spectroscopic ellipsometry Thin Solid Films 312 (1998) 354 - 356 H.SCHMIDT, B.RHEINLÄNDER, V.GOTTSCHALCH Ellipsometry on InAs and AlAs Monolayer Films Embedded in GaAs Thin Solid Films 313 - 314 (1998) 590 - 593
J.KOVAC, F.UHEREK, J.JAKABOVIC, J.SKRINIAROVA, J.BORGULOVA, M.TOMASKA, A.SATKA, V.GOTTSCHALCH, B.RHEINLÄNDER, S.HASENÖHRL Design, growth and characterisation of RCE PIN photodiode operating at 1300 nm wavelength range Heterostructure Epitaxy and Devices - HEAD´97, 227 - 230 B.RHEINLÄNDER, J.KOVAC, J.D.HECHT, J.BORGULOVA, F.UHEREK, J.WACLAWEK, V.GOTTSCHALCH, P.BARNA Ellipsometric Studies on Semiconductor Microcavity IR-Detector Structures Thin Solid Films 313 - 314 (1998) 599 - 603
J.BORGULOVA, B.RHEINLÄNDER, J.KOVAC, J.WACLAWEK, V.GOTTSCHALCH Quantum Confined Stark Effect in Microcavity AlGaAs/GaAs MQW Structures Studied by Optical Polarisation Spectroscopy Heterostructure Epitaxy and Devices - HEAD´97, 211 - 214 J.WACLAWEK, J.KOVAC, B.RHEINLÄNDER, V.GOTTSCHALCH, J.SKRINIAROVA GaAs/AlGaAs based electrically tunable RCE photodiode Materials Science and Engineering B51 (1988) 110-113
R.SRNANEK, J.SKRINIAROVA, J.KOVAC, L.FRANK, I.NOVOTNY, I.HOTOVY, V.GOTTSCHALCH Recognition of defects in semiconductor heterostructures on bevelled surfaces Inst. Phys. Conf. Ser. No 160 (1997) 409 - 412
K.ZIMMER, J.DIENELT, F.HERFURTH, A.BRAUN, K.OTTE, G.LIPPOLD, V.GOTTSCHALCH, F.BIGL
Excimer laser etching of GaAs,
Alx Applied Surface Science 127-129 (1998) 800 - 804
I.PIETZONKA, R.FRANZHELD, T.SAß, G.BENNDORF, R.SCHWABE, M.HANDSCHUH, V.GOTTSCHALCH Metal-organic vapour-phase epitaxial growth and characterization of (GaIn)P layers grown with different P-containing precursors J.Cryst. Growth 196 (1999) 33 – 40
G.KIRPAL, M.GERHARDT, V.GOTTSCHALCH, R.FRANZHELD, H.-C.SEMMELHACK Effects of organic As-precursors on the incorporation of In and Ga into (GaIn)As films grown by metal-organic vapor-phase epitaxy Thin Solid Films 342 (1999) 113 – 118
D.PUDIS, J.KOVAC, V.GOTTSCHALCH, G.BENNDORF, R.SCHWABE, A.SATKA, L.JANOS, J.SKRINIAROVA Optical properties of GaAs/AlAs monolayer multiquantum well structures EW MOVPE VIII on Metal-Organic Vapour-Phase Epitaxy and Related Growth Techniques,1999 Proceedings 389 –392
J.KOVAC, L.KUNA, V.GOTTSCHALCH, G.BENNDORF, M.GERHARDT, D.PUDIS, J.JAKABOVIC, J.SKRINIAROVA MOVPE growth and characterization of InAs/GaAs monolayer active region for laser structures EW MOVPE VIII on Metal-Organic Vapour-Phase Epitaxy and Related Growth Techniques, 1999 Proceedings 409 – 412 M.GERHARDT, G.KIRPAL, I.PIETZONKA, J.KOVAC, R.SCHWABE, G.BENNDORF, V.GOTTSCHALCH The influence of alternative group-V sources on the incorporation behaviour and heterointerface quality in the system (GaIn)(AsP) on InP EW MOVPE VIII on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques (1999), Proceedings 207 - 210
T.Saß, I.Pietzonka, V.Gottschalch, G.Wagner Correlation between the surface morphology and antiphase boundaries in ordered (GaIn)P Thin Solid Films 348 (1999) 196 - 201
J.Borgulova, B.Rheinländer, J.Kovac, F.Uherek, V.Gottschalch, G.Wagner, S.Nassauer, G.Benndorf, M.Gerhardt, J.Skriniarova, J.Jakabovic Optics of excitons in InGaAs/InP quantum wells 1th Intern. Conf. On InP and Related Materials, Davos 16 - 20. May 1999, Proc. 515 - 518
M.Schubert, J.A.Woollam, G.Leibiger, B.Rheinländer, I.Pietzonka, T.Saß, V.Gottschalch
Isotropic dielectric functions of highly disordered
Al J. Appl. Phys. 86 (1999) 2025 - 2033
R.Franzheld, C.Marschall, C. Recker, B.Wassermann, H.Schumann, G.Benndorf, V.Gottschalch Cyclohexylphosphine: synthesis and application to metalorganic vapor-phase epitaxy of InP J. Cryst. Growth 206 (1999) 51-99
M.Schubert, T.Hofmann, B.Rheinländer, I.Pietzonka, T.Saß, V.Gottschalch, I.A.Woollam,
Near-band-gap CuPt-order-induced birefringence in
Al.48Ga.52InP2 Phys. Rev.B 60 (1999) 16618 - 16634
J.Sik, M.Schubert, T. Hofmann, V.Gottschalch Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry MRS Internet J. Nitride Semicond. Res. 5, 3 (2000)
J.Sik, M.Schubert, G.Leibiger, V.Gottschalch, G. Kirpal, J.Humlicek Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry Appl. Phys. Lett. 76 (2000) 2859 -2861
I.Pietzonka, T.Saß, V.Gottschalch Systematic study of the surface morphology of ordered (GaIn)P Applied Surface Science 165 (2000) 60 - 69
I.Pietzonka,T.Saß, G.Benndorf, R.Franzheld, V.Gottschalch MOVPE growth and characterisation of Zn-doped (GaIn)P layers with respect to surface structure and ordering Cryst. Res. Technol. 35 (2000) 271-278
G.Leibiger, V. Gottschalch, B. Rheinländer, J. Sik, M.Schubert Nitrogen dependence of the GaAsN interband critical points E1 and E1+D1 determined by spectroscopic ellipsometry Appl.Phys.Letters 77 (2000) 1650
R.Pickenhain, H.Schmidt, V.Gottschalch Deep level transient spectroscopy and pseudopotential superlattice calculation for an InAs monolayer embedded in GaAs J. Appl. Phys. 88 (2000) 948-959
L.Kuna, F.Uherek, J.Kovac, J.Jakabovic, V.Gottschalch, B.Rheinländer Ridge-wavequide InAs/GaAs lasers ASDAM 2000, The Third International EuroConference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, 16.-18.October 2000, Proceedings p.127-130
J.Kvietkova, J.Kovac, B.Rheinländer, S.Hardt, V.Gottschalch, M.Blaho, J.Jakabovic, J.Skriniarova Resonant cavity LED with InAs/GaAs active region ASDAM 2000, The Third International EuroConference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, 16.-18.October 2000, Proceedings p.139-142 G.Leibiger, B.Rheinländer, V.Gottschalch, M.Schubert, J.Sik, G.Lippold Optical Properties of GaAs1-yNy (y<0.037) ASDAM 2000, The Third International EuroConference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, 16.-18.October 2000, Proceedings p.171-174
J.Kvietková, S.Hardt, J.Kovác, B.Rheinländer, L.Kuna, V.Gottschalch, J.Jakabovic Resonant microcavity edge-emitting laser with InAs/GaAs active region Proc. 25th Intern.Conf. on the Physics of Semiconductors, 17.-22.09.00, Osaka, Japan (eds. N.Miura and T.Ando), Springer Proc. in Physics, 87 (2001) 1727-1728
J.Sik, M.Schubert,G. Leibiger, V. Gottschalch, G.Wagner Band-gap energies, free carrier effects, and phonon modes in strained GaNAs/GaAs and GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry J. Appl. Phys. 89 (2001) 294-305
G.Leibiger, V.Gottschalch, B.Rheinländer, J.Sik, M.Schubert Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultra violet wavelengths J. Appl. Phys. 89 (2001) 4927 - 4938
M. Gerhardt, G. Kirpal, R. Schwabe, G. Benndorf, V. Gottschalch The influence of alternative group-V sources on heterointerface quality in the system GaInAs(P) on InP Thin Solid Films 392 (2001) 85 - 90
G. Leibiger, V. Gottschalch, R. Schwabe, G. Benndorf, M. Subert Phonon Modes and Critical Points of GaPN Phys. Stat. Sol. (b) 228 (2001) 279 - 282
G. Leibiger, V. Gottschalch, M. Schubert Phonon Modes of InxGa1-xAs1-yNy Measured by Far Infrared Spectroscopic Ellipsometry Phys. Stat. Sol. (b) 228 (2001) 259 - 262
last edit 09/2001 m.seitz
|