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Hirsch indices (based on ISI Web of Science)
all papers:
h=56, m=2.3 (04/2013, 370 publ., 13221 cit. (11868 w/o self cit.), 5 most quoted: 920, 746, 600, 531, 396)
Leipzig papers only:
h=34, m=2.8 (04/2013, 230 publ., 4604 cit. (3791 w/o self cit.), 5 most quoted: 263, 258, 247, 151, 146)
Hirsch indices (based on Google Scholar): all: 63, last 5 years: 43
  Researcher-ID

all journals AdvMat APL JAP JJAP PRA PRB PRL NT NL JEM SSE SSC SST SLMS TSF JCG NJP pss(a) pss(b) pss(c) pss(RRL) JVSTA JVSTB MRS SPIE

all years 2013 2012 2011 2010 2009 2008 2007 2006 2005 2000-2004 1995-1999 1990-1994 1988-1989

all authors Grundmann Lorenz von Wenckstern Pickenhain Rheinländer Schmidt-Grund Bimberg Alferov Christen Krost

all info no icons RTF Uni

117
Friedrich-Leonhard Schein, Holger von Wenckstern, Marius Grundmann
Transparent p-CuI/n-ZnO heterojunction diodes

Appl. Phys. Lett. 102(9), 092109 (4 pages) (2013)
[ pdf | doi ]

116
F.J. Klüpfel, F.L. Schein, M. Lorenz, H. Frenzel, H. von Wenckstern, M. Grundmann
Comparison of ZnO-based JFET, MESFET, and MISFET

IEEE Transact. Electr. Dev. 60(6), 1828-1833 (2013)
[ pdf | doi ]

115
Alexander Lajn, Holger von Wenckstern, Marius Grundmann, Gerald Wagner, Pedro Barquinha, Elvira Fortunato, Rodrigo Martins
Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films

J. Appl. Phys. 113, 044511 (13 pages) (2013)
[ pdf | doi ]

114
Marius Grundmann, Friedrich-Leonhard Schein, Michael Lorenz, Tammo Böntgen, Jörg Lenzner, Holger von Wenckstern
Cuprous Iodide: A p-type Transparent Conductor, History and Novel Applications

phys. stat. sol. (a), submitted (2013)
[ pdf ]

113
Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern
Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu ihrer Herstellung und Verwendung

EP 2 446 484 B1 (European Patent Office, Munich, 2013)
[ pdf ]

112
M. Lorenz, A. Reinhardt, H. von Wenckstern, M. Grundmann
Design rules of (Mg,Zn)O-based thin-film transistors with high-κ WO₃ dielectric gates

Appl. Phys. Lett. 101, 183502 (4 pages) (2012)
[ pdf | doi ]

111
R. Heinhold, H.-S. Kim, F. Schmidt, H. von Wenckstern, M. Grundmann, R.J. Mendelsberg, R.J. Reeves, S.M. Durbin, M.W. Allen
Optical and defect properties of hydrothermal ZnO with low lithium contamination

Appl. Phys. Lett. 101, 062105 (4 pages) (2012)
[ pdf | doi ]

110
Florian Schmidt, Holger von Wenckstern, Daniel Spemann, Marius Grundmann
On the radiation hardness of (Mg,Zn)O PLD thin films

Appl. Phys. Lett. 101, 012103 (4 pages) (2012)
[ pdf | doi ]

109
S. Müller, H. von Wenckstern, O. Breitenstein, J. Lenzner, M. Grundmann
Microscopic identification of hot spots in multi-barrier Schottky contacts on pulsed laser deposition grown zinc oxide thin films

IEEE Transact. Electr. Dev. 59(3), 536-541 (2012)
[ pdf | doi ]

108
Friedrich-Leonhard Schein, Holger von Wenckstern, Heiko Frenzel, and Marius Grundmann
ZnO-based n-channel junction field-effect transistor with room-temperature fabricated p-type ZnCo₂O₄-gate

IEEE Electron Device Letters 33(5), 676-678 (2012)
[ pdf | doi ]

107
M. Schmidt, M. Ellguth, R. Karsthof, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, F.C.C. Ling
On the T2 trap in zinc oxide thin films

phys. stat. sol. (b) 249(3), 588-595 (2012)
[ pdf | doi ]

106
Matthias Schmidt, Holger von Wenckstern, Rainer Pickenhain, Marius Grundmann
On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation

Sol. St. Electr. 75, 48-54 (2012)
[ pdf | doi ]

105
J.P. Richters, J. Kalden, M. Gnauck, C. Ronning, C.P. Dietrich, H. von Wenckstern, M. Grundmann, J. Gutowski, T. Voss
Modal gain and its diameter dependence in single ZnO micro- and nanowires

Semic. Sci. Technol. 27, 015005 (5 pages) (2012)
[ pdf | doi ]

104
H. von Wenckstern, R. Schmidt-Grund, C. Bundesmann, A. Müller, C.P. Dietrich, M. Stölzel, M. Lange, M. Grundmann
The (Mg,Zn)O Alloy

Handbook of Zinc Oxide and Related Materials, Vol. 1 Materials, p. 257-320 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855706
[ pdf | link | extra ]

103
Heiko Frenzel, Michael Lorenz, Friedrich-L. Schein, Alexander Lajn, Fabian J. Klüpfel, Tobias Diez, Holger von Wenckstern, Marius Grundmann
Metal-semiconductor field-effect transistors and integrated circuits based on ZnO and related oxides

Handbook of Zinc Oxide and Related Materials, Vol. 2 Devices and Nano-Engineering, p. 369-434 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855744
[ pdf | link | extra ]

102
Michael Lorenz, Holger von Wenckstern, Marius Grundmann
Tungsten oxide as gate dielectric for highly transparent and temperature-stable zincoxide-based thin-film transistors

Adv. Mater. 23, 5383-5386 (2011)
[ pdf | doi ]

101
Zh. Zhang, H. von Wenckstern, M. Schmidt, M. Grundmann
Wavelength selective metal-semiconductor-metal photodetectors based on (Mg,Zn)O-heterostructures

Appl. Phys. Lett. 99(8), 083502 (3 pages) (2011)
[ pdf | doi ]

100
C.P. Dietrich, M. Lange, F.J. Klüpfel, H. von Wenckstern, R. Schmidt-Grund, M. Grundmann
Strain distribution in bent ZnO microwires

Appl. Phys. Lett. 98(3), 031105 (3 pages) (2011)
[ pdf | link | doi ]

99
A. Lajn, T. Diez, F. Schein, H. Frenzel, H. von Wenckstern, M. Grundmann
Light and temperature stability of fully transparent ZnO-based inverter circuits

IEEE Electron Device Letters 32(4), 515-517 (2011)
[ pdf | doi ]

98
F.J. Klüpfel, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann
Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors

J. Appl. Phys. 109, 074515 (4 pages) (2011)
[ pdf | doi ]

97
C.P. Dietrich, M. Brandt, M. Lange, J. Kupper, T. Böntgen, H. von Wenckstern, M. Grundmann
Defect properties of ZnO and ZnO:P microwires

J. Appl. Phys. 109, 013712 (5 pages) (2011)
[ pdf | doi ]

96
A. Lajn, M. Schmidt, H. von Wenckstern, M. Grundmann
Erratum to: Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO

J. Electr. Mat. 40, 477 (1 page) (2011)
[ pdf | doi ]

95
A. Lajn, M. Schmidt, H. von Wenckstern, M. Grundmann
Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO

J. Electr. Mat. 40, 473-476 (2011)
[ pdf | doi ]

94
M. Lange, C.P. Dietrich, J. Zúñiga-Pérez, H. von Wenckstern, M. Lorenz, M. Grundmann
MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies

J. Vac. Sci. Technol. A 29, 03A104 (5 pages) (2011)
[ pdf | doi ]

93
Matthias Schmidt, Kerstin Brachwitz, Florian Schmidt, Martin Ellguth, Holger von Wenckstern, Rainer Pickenhain, Marius Grundmann, Gerhard Brauer, Wolfgang Skorupa
Nickel-related defects in ZnO - A deep-level transient spectroscopy and photo-capacitance study

phys. stat. sol. (b) 248(8), 1949-1955 (2011)
[ pdf | doi ]

92
M. Brandt, H. von Wenckstern, M. Stölzel, H. Hochmuth, M. Lorenz, M. Grundmann
Semiconducting oxide heterostructures

Semic. Sci. Technol. 26, 014040 (2011)
[ pdf | doi ]

91
H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann
Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu seiner Herstellung und Verwendung

DE 10 2009 030 045 B3 (Deutsches Patent- und Markenamt, München, 2011)
[ pdf ]

90
Michael Lorenz, Holger Hochmuth, Christoph Grüner, Helena Hilmer, Alexander Lajn, Daniel Spemann, Matthias Brandt, Jan Zippel, Rüdiger Schmidt-Grund, Holger von Wenckstern, Marius Grundmann
Oxide thin film heterostructures on large area, with flexible doping, low dislocation density and abrupt interfaces - grown by Pulsed Laser Deposition

Laser Chemistry 2011, 140976 (27 pages) (2011) (Hindawi, New York, 2011)
[ pdf | doi ]

89
H. Frenzel, A. Lajn, H. von Wenckstern, M. Lorenz, F. Schein, Zh. Zhang, M. Grundmann
Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and their Application in Transparent Integrated Circuits

Adv. Mater. 22, 5332-5349 (2010)
[ pdf | doi | extra ]

88
M. Lorenz, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann, P. Barquinha, R. Martins, E. Fortunato
Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

Appl. Phys. Lett. 97, 243506 (3 pages) (2010)
[ pdf | doi ]

87
D. Lausch, K. Petter, R. Bakowskie, C. Czekalla, J. Lenzner, H. von Wenckstern, M. Grundmann
Identification of Pre-Breakdown Mechanism of Silicon Solar Cells at Low Reverse Voltages

Appl. Phys. Lett. 97, 073506 (3 pages) (2010)
[ pdf | doi ]

86
H. Frenzel, F. Schein, A. Lajn, H. von Wenckstern, M. Grundmann
High-gain integrated inverters based on ZnO MESFET technology

Appl. Phys. Lett. 96, 113502 (3 pages) (2010)
[ pdf | doi ]

85
H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann
Ultrathin gate-contacts for MESFET devices: An alternative approach in transparent electronics

J. Appl. Phys. 107, 114515 (6 pages) (2010)
[ pdf | doi ]

84
S. Lautenschlaeger, S. Eisermann, M.N. Hofmann, U. Roemer, M. Pinnisch, A. Laufer, B.K. Meyer, H. von Wenckstern, A. Lajn, F. Schmidt, M. Grundmann, J. Blaesing, A. Krost
Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers

J. Cryst. Growth 312, 2078-2082 (2010)
[ pdf | doi ]

83
A. Lajn, H. von Wenckstern, G. Benndorf, C.P. Dietrich, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films

J. Electr. Mat. 39, 595-600 (2010)
[ pdf | doi ]

82
H. von Wenckstern, K. Brachwitz, M. Schmidt, C.P. Dietrich, M. Ellguth, M. Stölzel, M. Lorenz, M. Grundmann
The E3 defect in Mg_xZn_1-xO

J. Electr. Mat. 39, 584-588 (2010)
[ pdf | doi ]

81
J.Chai, R.J. Mendelsberg, R.J. Reeves, J. Kennedy, H. von Wenckstern, M. Grundmann, K. Doyle, T.H. Meyers, S.M. Durbin
Identification of a deep acceptor level in ZnO due to silver doping

J. Electr. Mat. 39, 577-583 (2010)
[ pdf | doi ]

80
H. von Wenckstern, S. Müller, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Dielectric passivation of ZnO-based Schottky diodes

J. Electr. Mat. 39, 559-562 (2010)
[ pdf | doi ]

79
J. Zippel, S. Heitsch, M. Stölzel, A. Müller, H. von Wenckstern, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann
Optical properties of homo- and heteroepitaxial ZnO/Mg_xZn_1-xO quantum wells grown by pulsed laser deposition

J. Lumin. 130, 520-526 (2010)
[ pdf | doi ]

78
H. von Wenckstern, Z.P. Zhang, M. Lorenz, C. Czekalla, H. Frenzel, A. Lajn, M. Grundmann
Light beam induced current measurements on ZnO Schottky diodes and MESFETs

Proc. Mat. Res. Soc. 1201, 1201-H04-02 (6 pages) (2010)
[ pdf | doi ]

77
C.P. Dietrich, A. Müller, M. Stölzel, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann
Bound-exciton recombination in Mg_xZn_1-xO thin films

Proc. Mat. Res. Soc. 1201, 1201-H03-08 (6 pages) (2010)
[ pdf | doi ]

76
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern, F. Schein, M. Lorenz
ZnO-based MESFET Devices

Proc. Mat. Res. Soc. 1201, 1201-H01-01 (5 pages) (2010)
[ pdf | doi ]

75
M. Brandt, H. von Wenckstern, G. Benndorf, M. Lange, C.P. Dietrich, C. Kranert, C. Sturm, R. Schmidt-Grund, H. Hochmuth, M. Lorenz, M. Grundmann, M.R. Wagner, M. Alic, C. Nenstiel, A. Hoffmann
Identification of a donor-related recombination channel in ZnO thin films

Phys. Rev. B 81, 073306 (4 pages) (2010)
[ pdf | doi ]

74
W. Anwand, G. Brauer, T.E. Cowan, V. Heera, H. Schmidt, W. Skorupa, H. von Wenckstern, G. Benndorf, M. Grundmann
Structural characterization of H plasma-doped ZnO single crystals by Hall measurements and photoluminescence studies

phys. stat. sol. (a) 207, 2426-2431 (2010)
[ pdf | doi ]

73
M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, H. von Wenckstern
Transparent Semiconducting Oxides: Materials and Devices

phys. stat. sol. (a) 207, 1437-1449 (2010)
[ pdf | link | doi | extra ]

72
R. Kaden, G. Wagner, C. Strum, R. Schmidt-Grund, H. von Wenckstern, A. Prager, K. Bente, M. Grundmann
Synthesis and physical properties of cylindrite micro tubes and lamellae

phys. stat. sol. (b) 247, 1335-1350 (2010)
[ pdf | doi ]

71
M. Schmidt, M. Ellguth, F. Schmidt, Th. Lüder, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa
Defects in a nitrogen-implanted ZnO thin film

phys. stat. sol. (b) 247, 1220-1226 (2010)
[ pdf | doi ]

70
C.P. Dietrich, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann
Donor-acceptor pair recombination in non-stoichiometric ZnO thin films

Sol. St. Comm. 150, 379-382 (2010)
[ pdf | doi ]

69
M. Lorenz, M. Brandt, M. Lange, G. Benndorf, H. von Wenckstern, D. Klimm, M. Grundmann
Homoepitaxial Mg_xZn_1-xO (0 ≤ x ≤ 0.22) thin films grown by pulsed laser deposition

Thin Solid Films 518, 4623-4629 (2010)
[ pdf | doi ]

68
B.Q. Cao, M. Lorenz, G. Zimmermann, C. Czekalla, M. Brandt, H. von Wenckstern, M. Grundmann
p-type Phosphorus Doped ZnO Wires for Optoelectronic Applications

Nanowires, p. 117-132 (2010), P. Prete, ed., ISBN 978-953-7619-79-4
[ pdf ]

67
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
PCT Application WO 2010/149616
[ pdf | extra ]

66
H. Frenzel, M. Lorenz, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Grundmann
ZnO-based metal-semiconductor field-effect transistors on glass substrates

Appl. Phys. Lett. 95, 153503 (3 pages) (2009)
[ pdf | doi ]

65
H. von Wenckstern, J. Zippel, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Two-dimensional electron gases in MgZnO/ZnO heterostructures

Proc. 29th Int. Conf. on the Physics of Semiconductors (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 99-100 (2009)
[ pdf | doi ]

64
H. Frenzel, H. von Wenckstern, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures

Proc. 29th Int. Conf. on the Physics of Semiconductors (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 469-470 (2009)
[ pdf | doi ]

63
H. von Wenckstern, A. Lajn, A. Laufer, B.K. Meyer, H. Hochmuth M. Lorenz, M. Grundmann
Ag related defect state in ZnO thin films

Proc. 29th Int. Conf. on the Physics of Semiconductors (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 122-123 (2009)
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62
M.W. Allen, S.M. Durbin, X. Weng, J.M. Redwing, K. Sarpatwari, S.E. Mohney, H. von Wenckstern, M. Grundmann
Temperature Dependent Properties of Nearly Ideal ZnO Schottky Diodes

IEEE Transact. Electr. Dev. 56, 2160-2164 (2009)
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61
A. Lajn, H. von Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, R. Denecke
Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO

J. Vac. Sci. Technol. B 27, 1769-1773 (2009)
[ pdf | doi ]

60
M. Lorenz, B. Cao, G. Zimmermann, G. Biehne, C. Czekalla, H. Frenzel, M. Brandt, H. von Wenckstern, M. Grundmann
Stable p-type ZnO:P nanowire/n-type ZnO:Ga film junctions, reproducibly grown by two-step pulsed laser deposition

J. Vac. Sci. Technol. B 27, 1693-1697 (2009)
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59
M. Brandt, H. von Wenckstern, Ch. Meinecke, T. Butz, H. Hochmuth, M. Lorenz, M. Grundmann
Dopant activation in homoepitaxial MgZnO:P thin films

J. Vac. Sci. Technol. B 27, 1604-1608 (2009)
[ pdf | doi ]

58
M. Schmidt, M. Ellguth, C. Czekalla, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa, M. Helm, Q. Gu, Ch.Ch. Ling
Defects in zinc-implanted ZnO thin films

J. Vac. Sci. Technol. B 27, 1597-1600 (2009)
[ pdf | doi ]

57
H. von Wenckstern, H. Schmidt, M. Brandt, A. Lajn, R. Pickenhain, M. Lorenz, M. Grundmann, D.M. Hofmann, A. Polity, B.K. Meyer, H. Saal, M. Binnewies, A. Börger, K.-D. Becker, V.A. Tikhomirov, K. Jug
Anionic and cationic substitution in ZnO

phys. stat. sol. (c) 37, 153-172 (2009)
[ pdf | doi ]

56
Dominik Lausch, Kai Petter, Holger von Wenckstern, Marius Grundmann
Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells

phys. stat. sol. RRL 3, 70-72 (2009)
[ pdf | doi | extra ]

55
M. Lorenz, M. Brandt, G. Wagner, H. Hochmuth, G. Zimmermann, H. von Wenckstern, M. Grundmann
MgZnO:P Homoepitaxy by Pulsed Laser Deposition: Pseudomorphic Layer-by-Layer Growth and High Electron Mobility

Proc. SPIE 7217, 72170N (15 pages) (2009)
[ pdf | doi ]

54
H. Frenzel, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Grundmann
ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates

Thin Solid Films 518, 1119-1123 (2009)
[ pdf | doi ]

53
M. Brandt, H. von Wenckstern, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Formation of a two-dimensional electron gas in MgZnO/ZnO heterostructures and quantum wells

Thin Solid Films 518, 1048-1052 (2009)
[ pdf | doi ]

52
R. Bakowskie, H. von Wenckstern, D. Lausch, M. Müller, K. Petter, M. Grundmann
Thermal admittance spectroscopy of multicrystalline silicon wafers and solar cells
Proc. 24th European Photovoltaic Solar Energy Conference, p. 2100-2102 (2009)
[ pdf ]

51
D. Lausch, K. Petter, R. Bakowskie, H. von Wenckstern, M. Grundmann
Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells
Proc. 24th European Photovoltaic Solar Energy Conference, p. 2053-2055 (2009)
[ pdf ]

50
H. Frenzel, A. Lajn, M. Brandt, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
ZnO metal-semiconductor field-effect transistors with Ag-Schottky-gates

Appl. Phys. Lett. 92, 192108 (3 pages) (2008)
[ pdf | doi ]

49
M. Brandt, H. von Wenckstern, H. Schmidt, A. Rahm, G. Biehne, G. Benndorf, H. Hochmuth, M. Lorenz, Ch. Meinecke, T. Butz, M. Grundmann
High electron mobility of phosphorous doped homoepitaxial ZnO thin films grown by pulsed laser deposition

J. Appl. Phys. 104, 013708 (6 pages) (2008)
[ pdf | doi ]

48
Holger von Wenckstern, Matthias Brandt, Heidemarie Schmidt, Christian Hanisch, Gabriele Benndorf, Holger Hochmuth, Michael Lorenz, Marius Grundmann
Homoepitaxial ZnO thin films by pulsed-laser deposition

J. Korean Phys. Soc. 53, 3064-3067 (2008)
[ pdf ]

47
H. von Wenckstern, G. Biehne, M. Lorenz, M. Grundmann, F.D. Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel
Dependence of trap concentrations in ZnO thin films on annealing conditions

J. Korean Phys. Soc. 53, 2861-2863 (2008)
[ pdf ]

46
F.D. Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel, H. von Wenckstern, H. Hochmuth, G. Biehne, M. Lorenz, M. Grundmann
Electronic properties of shallow level defects in ZnO grown by pulsed laser deposition
J. Phys. Conf. Ser. 100, 042038 (4 pages) (2008)
[ pdf | doi ]

45
M. Lorenz, G. Wagner, A. Rahm, H. Schmidt, H. Hochmuth, H. Schmid, W. Mader, M. Brandt, H. von Wenckstern, M. Grundmann
Homoepitaxial ZnO Thin Films by PLD: Structural Properties

phys. stat. sol. (c) 5, 3280-3287 (2008)
[ pdf | doi ]

44
B. Cao, M. Lorenz, M. Brandt, H. von Wenckstern, J. Lenzner, G. Biehne, M. Grundmann
p-type conducting ZnO:P microwires prepared by direct carbothermal growth

phys. stat. sol. RRL 2, 37-39 (2008)
[ pdf | doi ]

43
B. Q. Cao, M. Lorenz, H. von Wenckstern, C. Czekalla, M. Brandt, J. Lenzner, G. Benndorf, G. Biehne, M. Grundmann
Phosphorus doped ZnO nanowires: acceptor-related cathodoluminescence and p-type conducting FET-characteristics

Proc. SPIE 6895, 68950V (12 pages) (2008)
[ pdf | doi ]

42
H. von Wenckstern, M. Brandt, H. Schmidt, G. Benndorf, J. Zippel, H. Hochmuth,M. Lorenz, M. Grundmann
Properties of homoepitaxial ZnO and ZnO:P thin films grown by pulsed-laser deposition

Proc. SPIE 6895, 689505 (11 pages) (2008)
[ pdf | doi ]

41
Holger von Wenckstern, Martin Allen, Heidemarie Schmidt, Paul Miller, R. Reeves, Steve Durbin, Marius Grundmann
Defects in hydrothermally grown bulk ZnO

Appl. Phys. Lett. 91, 022913 (3 pages) (2007)
[ pdf | doi ]

40
R. Johne, M. Lorenz, H. Hochmuth, J. Lenzner, H. von Wenckstern, G. Zimmermann, H. Schmidt, R. Schmidt-Grund, M. Grundmann
Cathodoluminescence of large-area PLD grown ZnO thin films measured in transmission and reflection

Appl. Phys. A 88, 89-93 (2007)
[ pdf | doi ]

39
H. Schmidt, M. Diaconu, H. Hochmuth, G. Benndorf, H. von Wenckstern, G. Biehne, M. Lorenz, M. Grundmann
Electrical and optical spectroscopy on ZnO:Co films

Appl. Phys. A 88, 157-160 (2007)
[ pdf | doi ]

38
H. Schmidt, M. Diaconu, H. Hochmuth, G. Benndorf, H. von Wenckstern, G. Biehne, M. Lorenz, M. Grundmann
Electrical and optical spectroscopy on ZnO:Co films

Appl. Phys. A 88, 157-160 (2007)
[ pdf | doi ]

37
H. von Wenckstern, M. Brandt, H. Schmidt, G. Biehne, R. Pickenhain, H. Hochmuth, M. Lorenz, M. Grundmann
Donor like defects in ZnO substrate materials and ZnO thin films

Appl. Phys. A 88, 135-139 (2007)
[ pdf | doi ]

36
H. von Wenckstern, G. Benndorf, S. Heitsch, J. Sann, M. Brandt, H. Schmidt, J. Lenzner, M. Lorenz, A. Y. Kuznetsov, B.K. Meyer, M. Grundmann
Properties of phosphorous doped ZnO

Appl. Phys. A 88, 125-128 (2007)
[ pdf | doi ]

35
H. Frenzel, H. von Wenckstern, A. Weber, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Measurement of deep intrinsic defects in thin ZnO films via mid-infrared photocurrent spectroscopy

Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28) (Wien, Austria, 2006), AIP Conf. Proc. 893, 301-302 (2007)
[ pdf | doi ]

34
Chris Sturm, Rüdiger Schmidt-Grund, Ronny Kaden, Holger von Wenckstern, Bernd Rheinländer, Klaus Bente, Marius Grundmann
Optical Properties of Cylindrite

Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28) (Wien, Austria, 2006), AIP Conf. Proc. 893, 1483-1484 (2007)
[ pdf | doi ]

33
H. von Wenckstern, M. Brandt, J. Lenzner, G. Zimmermann, H. Hochmuth, M. Lorenz, M. Grundmann
Temperature dependent Hall measurements on PLD thin films

Proc. Mat. Res. Soc. 957, 23 (6 pages) (2007)
[ pdf | doi ]

32
M. Grundmann, A. Rahm, Th. Nobis, H. von Wenckstern, M. Lorenz, C. Czekalla, J. Lenzner
Growth and Characterization of Optical and Electrical Properties of ZnO Nano- and Microwires

Proc. Mat. Res. Soc. 957, 107 (6 pages) (2007)
[ pdf | doi ]

31
Martin Ward Allen, Holger von Wenckstern, Marius Grundmann, Stuart Hatfield, Paul Jefferson, Philip King, Timothy Veal, Chris Mcconville, Steven Durbin
Mechanisms in the Formation of High Quality Schottky Contacts to n-type ZnO

Proc. Mat. Res. Soc. 1035, L10-06 (2007)
[ doi ]

30
B.Q. Cao, M. Lorenz, A. Rahm, H. von Wenckstern, C. Czekalla, J. Lenzner, G. Benndorf, M. Grundmann
Phosphorous acceptor doped ZnO nanowires prepared by pulsed laser deposition

Nanotechnology 18, 455707 (5 pages) (2007)
[ pdf | doi ]

29
F. Danie Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel, Holger von Wenckstern, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 meV and 370 meV below the conduction band

Physica B 401-402, 378-381 (2007)
[ pdf | doi ]

28
H. Frenzel, H. von Wenckstern, A. Weber, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Photocurrent spectroscopy of deep levels in ZnO thin films

Phys. Rev. B 76, 035214 (6 pages) (2007)
[ pdf | doi ]

27
G. Brauer, W. Anwnad, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, H. von Wenckstern, M. Brandt, M. Lorenz, M. Grundmann
Defects in N⁺ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect

phys. stat. sol. (c) 4, 3642-3645 (2007)
[ pdf | doi ]

26
H. von Wenckstern, H. Schmidt, C. Hanisch, M. Brandt, C. Czekalla, G. Benndorf, G. Biehne, A. Rahm, H. Hochmuth, M. Lorenz, M. Grundmann
Homoepitaxy of ZnO by Pulsed-Laser Deposition

phys. stat. sol. RRL 1, 129-131 (2007)
[ pdf | doi | extra ]

25
Mariana Ungureanu, Heidemarie Schmidt, Qingyu Xu, Holger von Wenckstern, Daniel Spemann, Holger Hochmuth, Michael Lorenz, Marius Grundmann
Electrical and magnetic properties of RE-doped ZnO thin films (RE = Gd, Nd)

Superlatt. Microstr. 42, 231-235 (2007)
[ pdf | doi ]

24
H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann, G. Brauer
Investigation of acceptor states in ZnO by junction DLTS

Superlatt. Microstr. 42, 14-20 (2007)
[ pdf | doi ]

23
Michael Lorenz, Matthias Brandt, Jürgen Schubert, Holger Hochmuth, Holger von Wenckstern, Mathias Schubert, Marius Grundmann
Polarization coupling in epitaxial ZnO/BaTiO₃ thin film heterostructures on SrTiO₃ (100) substrates

Proc. SPIE 6474, 64741S (9 pages) (2007)
[ pdf | doi ]

22
Mariana Ungureanu, Heidemarie Schmidt, Holger von Wenckstern, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Marian Fecioru-Morariu, Gernot Güntherodt
A comparison between ZnO films doped with 3d and 4f magnetic ions

Thin Solid Films 515, 8761-8763 (2007)
[ pdf | doi ]

21
H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann
Deep acceptors states in ZnO single crystals

Appl. Phys. Lett. 89, 092122 (3 pages) (2006)
[ pdf | doi ]

20
H. von Wenckstern, G. Biehne, R. Abdel Rahman, H. Hochmuth, M. Lorenz, M. Grundmann
Mean barrier height of Pd Schottky contacts on ZnO thin films

Appl. Phys. Lett. 88, 092102 (3 pages) (2006)
[ pdf | doi ]

19
M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, G. Benndorf, D. Spemann, A. Setzer, P. Esquinazi, A. Pöppl, H. von Wenckstern, K.-W. Nielsen, R. Gross, H. Schmid, W. Mader, G. Wagner, M. Grundmann
Room-temperature ferromagnetic Mn-alloyed ZnO films obtained by pulsed laser deposition

J. Magn. Magn. Mat. 307, 212-221 (2006)
[ pdf | doi ]

18
G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, M. Grundmann
Defects in virgin and N⁺-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy

Phys. Rev. B 74, 045208 (10 pages) (2006)
[ pdf | doi ]

17
M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, H. von Wenckstern, G. Biehne, D. Spemann, M. Grundmann
Deep defects generated in n-conducting ZnO:TM thin films

Sol. St. Comm. 137, 417-421 (2006)
[ pdf | doi ]

16
Holger von Wenckstern, Swen Weinhold, Gisela Biehne, Rainer Pickenhain, Heidemarie Schmidt, Holger Hochmuth, and Marius Grundmann
Donor levels in ZnO

Adv. Sol. St. Phys. 45, 263-274 (2005)
[ pdf ]

15
H.Schmidt, M.Diaconu, E.Guzman, H.Hochmuth, M.Lorenz , G.Benndorf, A.Setzer, P.Esquinazi, H. von Wenckstern, D.Spemann, A.Pöppl, R.Böttcher, M.Grundmann
N-conducting, ferromagnetic Mn-doped ZnO thin films on sapphire substrates

Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27) (Flagstaff, AZ, 2004); AIP Conf. Proc. 772, 351-352 (2005)
[ pdf | doi ]

14
H. von Wenckstern, S. Weinhold, G. Biehne, R. Pickenhain, E.M. Kaidashev, M. Lorenz, M. Grundmann
Static and transient capacitance spectroscopy on ZnO

Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27) (Flagstaff, AZ, 2004); AIP Conf. Proc. 772, 197-198 (2005)
[ pdf | doi ]

13
H. von Wenckstern, S. Heitsch, G. Benndorf, D. Spemann, E.M. Kaidashev, M. Lorenz, M. Grundmann
Incorporation and electrical activity of group V acceptors in ZnO thin films

Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27) (Flagstaff, AZ, 2004); AIP Conf. Proc. 772, 183-184 (2005)
[ pdf | doi ]

12
Holger von Wenckstern, Rainer Pickenhain, Swen Weinhold, Michael Ziese, Pablo Esquinazi, Marius Grundmann
Electrical properties of Ni/GaAs and Au/GaAs Schottky contacts in high magnetic fields

Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27) (Flagstaff, AZ, 2004); AIP Conf. Proc. 772, 1333-1334 (2005)
[ pdf | doi ]

11
M. Grundmann, H. von Wenckstern, R. Pickenhain, Th. Nobis, A. Rahm, M. Lorenz
Electrical Properties of ZnO Thin Films and Optical Properties of ZnO-based Nanostructures

Superlatt. Microstr. 38, 317-328 (2005)
[ pdf | doi ]

10
M. Lorenz, H. Hochmuth, J. Lenzner, T. Nobis, G. Zimmermann, M. Diaconu, H. Schmidt, H. von Wenckstern, M. Grundmann
Room-temperature luminescence of n-type ZnO thin films grown by pulsed laser deposition in N₂, N₂O, and O₂

Thin Solid Films 486, 205-209 (2005)
[ pdf | doi ]

9
N. Ashkenov, M. Schubert, E. Twerdowski, B.N. Mbenkum, H. Hochmut, M. Lorenz, H. von Wenckstern, W. Grill, M. Grundmann
Rectifying ferroelectric polarization loops and offsets in Pt-BaTiO₃-ZnO-Pt thin film capacitor structures

Thin Solid Films 486, 153-157 (2005)
[ pdf | doi ]

8
M. Grundmann, H. von Wenckstern, R. Pickenhain, S. Weinhold, B. Chengnui, O. Breitenstein
Electrical properties of ZnO thin films and single crystals

NATO Science Series II: Mathematics, Physics and Chemistry 194, 47-57 (2005), N.H. Nickel, E. Terukov, eds. (Kluwer, Dordrecht, 2005), ISBN 1-4020-3474-1
[ pdf ]

7
M. Lorenz, H. Hochmuth, J. Lenzner, M. Brandt, H. von Wenckstern, G. Benndorf, M. Grundmann
ZnO thin films grown by pulsed laser deposition on 6H-SiC single crystals
Wissenschaftlich Technische Berichte des Forschungszentrums Rossendorf FZR 433, 57-62 (2005)
[ pdf ]

6
M. Schubert, N. Ashkenov, T. Hofmann, M. Lorenz, H. Hochmuth, H. von Wenckstern, M. Grundmann, G. Wagner
Electro-optical properties of ZnO-BaTiO₃-ZnO heterostructures grown by pulsed laser deposition

Ann. Phys. 13, 61-62 (2004)
[ pdf | doi ]

5
E. Guzman, H. Hochmuth, M. Lorenz, H. von Wenckstern, A. Rahm, E.M. Kaidashev, M. Ziese, A. Setzer, P. Esquinazi, A. Pöppl, D. Spemann, R. Pickenhain, H. Schmidt, M. Grundmann
Pulsed laser deposition of Fe- and Fe, Cu-doped ZnO thin films

Ann. Phys. 13, 57-58 (2004)
[ pdf | doi ]

4
H. von Wenckstern, E. M. Kaidashev, M. Lorenz, H. Hochmuth, G. Biehne, J. Lenzner, V. Gottschalch, R. Pickenhain, M. Grundmann
Lateral homogeneity of Schottky contacts on n-type ZnO

Appl. Phys. Lett. 84, 79-81 (2004)
[ pdf | doi ]

3
E. M. Kaidashev, M. Lorenz, H. von Wenckstern, J. Lenzner, G. Benndorf, A. Rahm, H.-C. Semmelhack, K.-H. Han, H. Hochmuth, C. Bundesmann, V. Riede, M. Grundmann
High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition

Appl. Phys. Lett. 82, 3901-3903 (2003)
[ pdf | doi ]

2
H. von Wenckstern, H. Schmidt, R. Pickenhain, M. Grundmann
Conduction band offset of pseudomorphic InAs/GaAs determined by capacitance spectroscopy

Proc. 26th Int. Conf. on the Physics of Semiconductors, Edinburgh (ICPS-26), Institute of Physics Conference Series 171, H2 (7 pages) (2003) (IoP Publishing, Bristol), ISBN 978-0-7503-0924-0
[ pdf ]

1
M. Lorenz, E. M. Kaidashev, H. von Wenckstern, V. Riede, C. Bundesmann, D. Spemann, G. Benndorf, H. Hochmuth, A. Rahm, H.-C. Semmelhack, M. Grundmann
Optical and electrical properties of epitaxial (Mg,Cd)_xZn_1-xO, ZnO, and ZnO:(Ga,Al) thin films on c-plane sapphire grown by pulsed laser deposition

Sol. St. Electr. 47, 2205-2209 (2003)
[ pdf | doi ]