Please request access to reprints here. Hirsch indices (based on ISI Web of Science)
all papers:
h=56, m=2.3 (04/2013, 370 publ., 13221 cit. (11868 w/o self cit.), 5 most quoted: 920, 746, 600, 531, 396)
Leipzig papers only:
h=34, m=2.8 (04/2013, 230 publ., 4604 cit. (3791 w/o self cit.), 5 most quoted: 263, 258, 247, 151, 146)
Hirsch indices (based on Google Scholar): all: 63, last 5 years: 43
Researcher-ID
 all journals AdvMat APL JAP JJAP PRA PRB PRL NT NL JEM SSE SSC SST SLMS TSF JCG NJP pss(a) pss(b) pss(c) pss(RRL) JVSTA JVSTB MRS SPIE all years 2013 2012 2011 2010 2009 2008 2007 2006 2005 2000-2004 1995-1999 1990-1994 1988-1989 all authors Grundmann Lorenz von Wenckstern Pickenhain Rheinländer Schmidt-Grund Bimberg Alferov Christen Krost all info no icons RTF Uni 14
M. Brandt, H. Frenzel, H. Hochmuth, M. Lorenz, M. Grundmann, J. Schubert
Ferroelectric thin film field-effect transistors based on ZnO/BaTiO3 heterostructures
J. Vac. Sci. Technol. B 27, 1789-1793 (2009)
[ pdf | doi ] 13
C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, J. Zúñiga Pérez, M. Lorenz, M. Grundmann
Optical characterization of zinc oxide microlasers and microwire core-shell heterostructures
J. Vac. Sci. Technol. B 27, 1780-1783 (2009)
[ pdf | doi ] 12
A. Lajn, H. von Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, R. Denecke
Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO
J. Vac. Sci. Technol. B 27, 1769-1773 (2009)
[ pdf | doi ] 11
M. Lange, J. Zippel, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Temperature Dependence of Localization Effects of Excitons in ZnO/CdxZn1-xO/ZnO Double Heterostructures
J. Vac. Sci. Technol. B 27, 1741-1745 (2009)
[ pdf | doi ] 10
J. Zippel, J. Lenzner, G. Benndorf, M. Lange, H. Hochmuth, M. Lorenz, M. Grundmann
Electronic coupling in MgxZn1-xO/ZnO double quantum wells
J. Vac. Sci. Technol. B 27, 1735-1740 (2009)
[ pdf | doi ] 9
C. Sturm, H. Hilmer, R. Schmidt-Grund, C. Czekalla, J. Sellmann, J. Lenzner, M. Lorenz, M. Grundmann
Strong Exciton-Photon Coupling In ZnO based Resonators
J. Vac. Sci. Technol. B 27, 1726-1730 (2009)
[ pdf | doi ] 8
M. Lorenz, B. Cao, G. Zimmermann, G. Biehne, C. Czekalla, H. Frenzel, M. Brandt, H. von Wenckstern, M. Grundmann
Stable p-type ZnO:P nanowire/n-type ZnO:Ga film junctions, reproducibly grown by two-step pulsed laser deposition
J. Vac. Sci. Technol. B 27, 1693-1697 (2009)
[ pdf | doi ] 7
M. Brandt, H. von Wenckstern, Ch. Meinecke, T. Butz, H. Hochmuth, M. Lorenz, M. Grundmann
Dopant activation in homoepitaxial MgZnO:P thin films
J. Vac. Sci. Technol. B 27, 1604-1608 (2009)
[ pdf | doi ] 6
M. Schmidt, M. Ellguth, C. Czekalla, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa, M. Helm, Q. Gu, Ch.Ch. Ling
Defects in zinc-implanted ZnO thin films
J. Vac. Sci. Technol. B 27, 1597-1600 (2009)
[ pdf | doi ] 5
X. Yang, L. J. Brillson, A. D. Raisanen, L. Vanzetti, A. Bonanni, A. Franciosi, M. Grundmann, D. Bimberg
Evolution of deep levels and internal photoemission with annealing temperature at ZnSe/GaAs interfaces
J. Vac. Sci. Technol. B 14, 2961-2966 (1996)
[ pdf | doi ] 4
M. Grundmann, A. Krost, D. Bimberg, H. Cerva
InGaAs/InP Quantum Wells on vicinal Si(001): Structural and Optical Properties
J. Vac. Sci. Technol. B 10, 1840-1843 (1992)
[ pdf | doi ] 3
J. Christen, M. Grundmann, D. Bimberg
Scanning Cathodoluminescence Microscopy: A Unique Approach to Atomic Scale Characterization of HeteroInterfaces and Imaging of Semiconductor Inhomogeneities
J. Vac. Sci. Technol. B 9, 2358-2368 (1991)
[ pdf | doi ] 2
M. Grundmann, A. Krost, D. Bimberg
Observation of the First Order Phase Transition from Single to Double Stepped Si (001) in Metalorganic Chemical Vapor Deposition of InP on Si
J. Vac. Sci. Technol. B 9, 2158-2166 (1991)
[ pdf | doi ] 1
M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Dependence of Structural and Optical Properties of In0.23Ga0.77As/GaAs Quantum Wells on Misfit Dislocations: Different Critical Thickness for Dislocation Generation and Degradation of Optical Properties
J. Vac. Sci. Technol. B 8, 751-757 (1990)
[ pdf | doi ] |