Please request access to reprints here. Hirsch indices (based on ISI Web of Science)
all papers:
h=56, m=2.3 (04/2013, 370 publ., 13221 cit. (11868 w/o self cit.), 5 most quoted: 920, 746, 600, 531, 396)
Leipzig papers only:
h=34, m=2.8 (04/2013, 230 publ., 4604 cit. (3791 w/o self cit.), 5 most quoted: 263, 258, 247, 151, 146)
Hirsch indices (based on Google Scholar): all: 63, last 5 years: 43
Researcher-ID
 all journals AdvMat APL JAP JJAP PRA PRB PRL NT NL JEM SSE SSC SST SLMS TSF JCG NJP pss(a) pss(b) pss(c) pss(RRL) JVSTA JVSTB MRS SPIE all years 2013 2012 2011 2010 2009 2008 2007 2006 2005 2000-2004 1995-1999 1990-1994 1988-1989 all authors Grundmann Lorenz von Wenckstern Pickenhain Rheinländer Schmidt-Grund Bimberg Alferov Christen Krost all info no icons RTF Uni 35
H. Frenzel, M. Lorenz, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Grundmann
ZnO-based metal-semiconductor field-effect transistors on glass substrates
Appl. Phys. Lett. 95, 153503 (3 pages) (2009)
[ pdf | doi ] 34
M. Voora, T. Hofmann, M. Brandt, M. Lorenz, N. Ashkenov, M. Grundmann, M. Schubert
Electrical properties of ZnO-BaTiO3-ZnO heterostructures with asymmetric interface charge distribution
Appl. Phys. Lett. 95, 082902 (3 pages) (2009)
[ pdf | doi ] 33
V.M. Voora, T. Hofman, M. Schubert, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov
Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures
Appl. Phys. Lett. 94, 142904 (3 pages) (2009)
[ pdf | doi ] 32
H. von Wenckstern, J. Zippel, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Two-dimensional electron gases in MgZnO/ZnO heterostructures
Proc. 29th Int. Conf. on the Physics of Semiconductors (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 99-100 (2009)
[ pdf | doi ] 31
H. Frenzel, H. von Wenckstern, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures
Proc. 29th Int. Conf. on the Physics of Semiconductors (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 469-470 (2009)
[ pdf | doi ] 30
R. Schmidt-Grund, C. Sturm, H. Hilmer, J. Sellmann, C. Czekalla, B. Rheinländer, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann
Exciton-polaritons in ZnO microcavity resonators
Proc. 29th Int. Conf. on the Physics of Semiconductors (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 175-176 (2009)
[ pdf | doi ] 29
H. Hilmer, J. Sellmann, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, H. Hochmuth, J. Lenzner, M. Lorenz, M. Grundmann
PLD Growth of High Reflective All-Oxide Bragg Reflectors for ZnO Resonators
Proc. 29th Int. Conf. on the Physics of Semiconductors (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 151-152 (2009)
[ pdf | doi ] 28
H. von Wenckstern, A. Lajn, A. Laufer, B.K. Meyer, H. Hochmuth M. Lorenz, M. Grundmann
Ag related defect state in ZnO thin films
Proc. 29th Int. Conf. on the Physics of Semiconductors (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 122-123 (2009)
[ pdf | doi ] 27
M.W. Allen, S.M. Durbin, X. Weng, J.M. Redwing, K. Sarpatwari, S.E. Mohney, H. von Wenckstern, M. Grundmann
Temperature Dependent Properties of Nearly Ideal ZnO Schottky Diodes
IEEE Transact. Electr. Dev. 56, 2160-2164 (2009)
[ pdf | doi ] 26
M. Grundmann, C.P. Dietrich
Lineshape Theory of Photoluminescence from Semiconductor Alloys
J. Appl. Phys. 106, 123521 (10 pages) (2009)
[ pdf | doi ] 25
Q.Y. Xu, S. Zhou, D. Markó, K. Potzger, J. Fassbender, M. Vinnichenko, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Paramagnetism in Co-doped ZnO films
J. Phys. D: Appl. Phys. 42, 085001 (5 pages) (2009)
[ pdf | doi ] 24
M. Brandt, H. Frenzel, H. Hochmuth, M. Lorenz, M. Grundmann, J. Schubert
Ferroelectric thin film field-effect transistors based on ZnO/BaTiO3 heterostructures
J. Vac. Sci. Technol. B 27, 1789-1793 (2009)
[ pdf | doi ] 23
C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, J. Zúñiga Pérez, M. Lorenz, M. Grundmann
Optical characterization of zinc oxide microlasers and microwire core-shell heterostructures
J. Vac. Sci. Technol. B 27, 1780-1783 (2009)
[ pdf | doi ] 22
A. Lajn, H. von Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, R. Denecke
Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO
J. Vac. Sci. Technol. B 27, 1769-1773 (2009)
[ pdf | doi ] 21
M. Lange, J. Zippel, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Temperature Dependence of Localization Effects of Excitons in ZnO/CdxZn1-xO/ZnO Double Heterostructures
J. Vac. Sci. Technol. B 27, 1741-1745 (2009)
[ pdf | doi ] 20
J. Zippel, J. Lenzner, G. Benndorf, M. Lange, H. Hochmuth, M. Lorenz, M. Grundmann
Electronic coupling in MgxZn1-xO/ZnO double quantum wells
J. Vac. Sci. Technol. B 27, 1735-1740 (2009)
[ pdf | doi ] 19
C. Sturm, H. Hilmer, R. Schmidt-Grund, C. Czekalla, J. Sellmann, J. Lenzner, M. Lorenz, M. Grundmann
Strong Exciton-Photon Coupling In ZnO based Resonators
J. Vac. Sci. Technol. B 27, 1726-1730 (2009)
[ pdf | doi ] 18
M. Lorenz, B. Cao, G. Zimmermann, G. Biehne, C. Czekalla, H. Frenzel, M. Brandt, H. von Wenckstern, M. Grundmann
Stable p-type ZnO:P nanowire/n-type ZnO:Ga film junctions, reproducibly grown by two-step pulsed laser deposition
J. Vac. Sci. Technol. B 27, 1693-1697 (2009)
[ pdf | doi ] 17
M. Brandt, H. von Wenckstern, Ch. Meinecke, T. Butz, H. Hochmuth, M. Lorenz, M. Grundmann
Dopant activation in homoepitaxial MgZnO:P thin films
J. Vac. Sci. Technol. B 27, 1604-1608 (2009)
[ pdf | doi ] 16
M. Schmidt, M. Ellguth, C. Czekalla, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa, M. Helm, Q. Gu, Ch.Ch. Ling
Defects in zinc-implanted ZnO thin films
J. Vac. Sci. Technol. B 27, 1597-1600 (2009)
[ pdf | doi ] 15
R. Schmidt-Grund, A. Hinkel, H. Hilmer, J. Zúñiga-Pérez, C. Sturm, B. Rheinländer, M. Grundmann
ZnO nano-pillar resonators with coaxial Bragg reflectors
Proc. Mat. Res. Soc. 1178, 1178-AA10-13 (7 pages) (2009)
[ pdf | doi ] 14
C. Sturm, H. Hilmer, R. Schmidt-Grund, M. Grundmann
Observation of strong exciton-photon coupling at temperatures up to 410 K
New J. Phys. 11, 073044 (12 pages) (2009)
[ pdf | doi ] 13
M. Willander, O. Nur, Q.X. Zhao, L.L. Yang, M. Lorenz, B.Q. Cao, J. Zúñiga-Pérez, C. Czekalla, G. Zimmermann, M. Grundmann, A. Bakin, A. Behrends, M. Al- Suleiman, A. Al-Shaer, A. Che Mofor, B. Postels, A. Waag, N. Boukos, A. Travlos, J. Guinard, D. Le Si Dang
Zinc Oxide Nanorods Based Photonic Devices: Recent Progress in Growth, Light Emitting Diodes and Lasers
Nanotechnology 20, 332001 (40 pages) (2009)
[ pdf | doi ] 12
B.Q. Cao, J. Zúñiga-Pérez, N. Boukos, C. Czekalla, H. Hilmer, J. Lenzner, A. Travlos, M. Lorenz, M. Grundmann
Homogeneous core/shell ZnO/MgZnO quantum well heterostructures on vertical ZnO nanowires
Nanotechnology 20, 305701 (8 pages) (2009)
[ pdf | doi | extra ] 11
M. Khalid, M. Ziese, A. Setzer, P. Esquinazi, M. Lorenz, H. Hochmuth, M. Grundmann, D. Spemann, T. Butz, G. Brauer, W. Anwand, G. Fischer, W.A. Adeagbo, W. Hergert, A. Ernst
Defect-induced magnetic order in pure ZnO films
Phys. Rev. B 80, 035331 (5 pages) (2009)
[ pdf | doi ] 10
A.O. Ankiewicz, W. Gehlhoff, J.S. Martins, A.S. Pereira, S. Pereira, A. Hoffmann, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, M.C. Carmo, T. Trindade, N.A. Sobolev
Magnetic and structural properties of transition metal doped zinc-oxide nanostructures
phys. stat. sol. (b) 246, 766-770 (2009)
[ pdf | doi ] 9
Frank Lipski, Sarad B. Thapa, Joachim Hertkorn, Thomas Wunderer, Stephan Schwaiger, Ferdinand Scholz, Martin Feneberg, Michael Wiedenmann, Klaus Thonke, Holger Hochmuth, Michael Lorenz, Marius Grundmann
Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer
phys. stat. sol. (c) 6, S352-S355 (2009)
[ pdf | doi ] 8
H. von Wenckstern, H. Schmidt, M. Brandt, A. Lajn, R. Pickenhain, M. Lorenz, M. Grundmann, D.M. Hofmann, A. Polity, B.K. Meyer, H. Saal, M. Binnewies, A. Börger, K.-D. Becker, V.A. Tikhomirov, K. Jug
Anionic and cationic substitution in ZnO
phys. stat. sol. (c) 37, 153-172 (2009)
[ pdf | doi ] 7
Dominik Lausch, Kai Petter, Holger von Wenckstern, Marius Grundmann
Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells
phys. stat. sol. RRL 3, 70-72 (2009)
[ pdf | doi | extra ] 6
M. Lorenz, M. Brandt, G. Wagner, H. Hochmuth, G. Zimmermann, H. von Wenckstern, M. Grundmann
MgZnO:P Homoepitaxy by Pulsed Laser Deposition: Pseudomorphic Layer-by-Layer Growth and High Electron Mobility
Proc. SPIE 7217, 72170N (15 pages) (2009)
[ pdf | doi ] 5
H. Frenzel, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Grundmann
ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates
Thin Solid Films 518, 1119-1123 (2009)
[ pdf | doi ] 4
M. Brandt, H. von Wenckstern, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Formation of a two-dimensional electron gas in MgZnO/ZnO heterostructures and quantum wells
Thin Solid Films 518, 1048-1052 (2009)
[ pdf | doi ] 3
R. Bakowskie, H. von Wenckstern, D. Lausch, M. Müller, K. Petter, M. Grundmann
Thermal admittance spectroscopy of multicrystalline silicon wafers and solar cells
Proc. 24th European Photovoltaic Solar Energy Conference, p. 2100-2102 (2009)
[ pdf ] 2
D. Lausch, K. Petter, R. Bakowskie, H. von Wenckstern, M. Grundmann
Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells
Proc. 24th European Photovoltaic Solar Energy Conference, p. 2053-2055 (2009)
[ pdf ] 1
S.Q. Zhou, K. Potzger, Q.Y. Xu, G. Talut, M. Lorenz, W. Skorupa, M. Helm, J. Fassbender, M. Grundmann, H. Schmidt
Ferromagnetic transition metal implanted ZnO: A diluted magnetic semiconductor?
Vacuum 83, S13-S19 (2009)
[ pdf | doi ] |
