Heiko Frenzel, Alexander Lajn, Holger von Wenckstern and Marius Grundmann
Transparent rectifying metal-metal oxide-semiconductor contact structure and method of fabrication and application
german patent No. 10 2009 030 045

  

22
H. Frenzel, M. Lorenz, F.-L. Schein, A. Lajn, F.J. Klüpfel, T. Diez, H. von Wenckstern, M. Grundmann
Metal-semiconductor Field-effect Transistors and Integrated Circuits Based on ZnO and Related Oxides.
Handbook of Zinc Oxide and Related Materials, Vol. 2 Devices and Nano-Engineering,
Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2011),
ISBN 978-1439855744

21
F. J. Klüpfel , A. Lajn, H. Frenzel, H. von Wenckstern, and M. Grundmann
Gate- and Drain-Lag Effects in (Mg,Zn)O-based Metal-Semiconductor Field-Effect Transistors
J. Appl. Phys., 109, 074515 (2011)

20
A. Lajn, T. Diez, F. Schein, H. Frenzel, H. von Wenckstern, and M. Grundmann
Light and temperature stability of fully transparent ZnO-based inverter circuits
IEEE Electron Device Letters, 32, 515 (2011)

19
M. Lorenz, A. Lajn, H. Frenzel, H. v. Wenckstern, M. Grundmann, P. Barquinha, R. Martins, and E. Fortunato
Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
Appl. Phys. Lett. 97, 243506 (2010)

18
A. Lajn, M.Schmidt, H. v. Wenckstern, and M. Grundmann
Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO
J. Electron. Mater. 40, 473 (2011)

18a
A. Lajn, M.Schmidt, H. v. Wenckstern, and M. Grundmann
Erratum to: Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO
J. Electron. Mater. 40, 477 (2011)

17
M. Lorenz, Holger Hochmuth, Christoph Grüner, Helena Hilmer, Alexander Lajn, D. Spemann, Matthias Brandt, Jan Zippel, R. Schmidt-Grund, H. Von Wenckstern and Marius Grundmann
Oxide thin film heterostructures on large area, with flexible doping, low dislocation density and abrupt interfaces grown by Pulsed Laser Deposition
Laser Chemistry 2010, 140976 (2010)

16
H. Frenzel, A. Lajn, H. von Wenckstern, Michael Lorenz, Friedrich Schein, Zhipeng Zhang, M. Grundmann
Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and their Application in Transparent Integrated Circuits
Advanced Materials 22, Issue 47, 5332–5349

15
Stefan Lautenschlaeger, Sebastian Eisermann, Michael N. Hofmann, Udo Roemer, Melanie Pinnisch, Andreas Laufer, Bruno K. Meyer, Holger von Wenckstern, Alexander Lajn, Florian Schmidt, Marius Grundmann, Juergen Blaesing, Alois Krost
Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers
Journal of Crystal Growth 312, 2078 (2010)

14
H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann
Ultrathin gate-contacts for MESFET devices: A new approach in transparent electronics
J. Appl. Phys. 107, 114515 (2010)

13
H. von Wenckstern, Z. P. Zhang, M. Lorenz, C. Czekalla, H. Frenzel, A. Lajn and M. Grundmann
Light beam induced current measurements on ZnO Schottky diodes and MESFETs
Mat. Res. Soc. Symp. Proc. 1201, H04-02 (2010)

12
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern, F. Schein, M. Lorenz
ZnO-based MESFET Devices
Mat. Res. Soc. Symp. Proc. 1201, H01-01 (2010)

11
H. Frenzel, F. Schein, A. Lajn, H. von Wenckstern, M. Grundmann
High-gain integrated inverters based on ZnO MESFET technology
Appl. Phys. Lett. 96, 113502 (2010)

10
A. Lajn, H. v. Wenckstern, G. Benndorf, C. P. Dietrich, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann
Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films
J. Electron. Mater. 39, 595 (2010)

9
H. von Wenckstern, H. Schmidt, M. Brandt, A. Lajn, R. Pickenhain, M. Lorenz, M. Grundmann, D.M. Hofmann, A. Polity, B.K. Meyer, H. Saal, M. Binnewies, A. Börger, K.-D. Becker, V.A. Tikhomirov, K. Jug
Anionic and cationic substitution in ZnO
Prog. Sol. Stat. Chem. 37, 153-172 (2009).

8
M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, H. von Wenckstern
Transparent Semiconducting Oxides: Materials and Devices
Phys. Stat. Sol. A 207, 1437 (2010)

7
H. Frenzel, M. Lorenz jr., A. Lajn, H. v. Wenckstern, G. Biehne, H. Hochmuth, and M. Grundmann
ZnO-based metal-semiconductor field-effect transistors on glass substrates
Appl. Phys. Lett. 95, 153503 (2009).

6
H. Frenzel, A. Lajn, M. Brandt, H. von Wenckstern, G. Biehne, H. Hochmuth, and M. Grundmann
ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates
Thin Solid Films, 518, 1119 (2009)

5
A. Lajn, H. von Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, R. Denecke
Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO
J. Vac. Sci. Technol. B 27, 1769 (2009)

4
Heiko Frenzel, Holger von Wenckstern, Alexander Lajn, Matthias Brandt, Gisela Biehne, Holger Hochmuth, Michael Lorenz and Marius Grundmann
Interface effects in ZnO metal-insulator-semiconductor- and metal semiconductor-strutures
AIP conference proceedings, 1199, 469 (2010)

3
Holger von Wenckstern, Alexander Lajn, Andreas Laufer, Bruno K. Meyer, Holger Hochmuth, Michael Lorenz and Marius Grundmann
Ag related defect state in ZnO thin films
AIP conference proceedings, 1199, 122 (2010)

2
H. von Wenckstern, J. Zippel, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz and M. Grundmann
Two-dimensional electron gases in MgZnO/ZnO heterostructures
AIP conference proceedings, 1199, 99 (2010)

1
H. Frenzel, A. Lajn, M. Brandt, H. v. Wenckstern, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann
ZnO metal-semiconductor field-effect transistors with Ag-Schottky-gates
Appl. Phys. Lett. 92, 192108 (2008)