Hall-Effect and Electrical Conductivity
Supervisor: Prof. Dr. Michael Lorenz, Wolfram Fritzsche
Electrical
and galvanometric measurements
are done on semiconductor samples to determine the
characteristic
parameters like the specific resistance, the Hall coefficient,
and the
concentration and mobility of charge carriers. The geometric
dimensions
of the samples are determined with a CCD camera.
a) Measurements on n- and p-conducting silicon samples of definite geometry at room temperature
- Determination of the specific resistance
- Determination of the Hall coefficient, the conducting type, and the charge carrier concentration
b) Measurements on GaAs-samples in temperature range from 77 K to 300 K yield the temperature dependence of the
- Specific resistance
- Hall coefficient
- Charge carrier concentration and charge carrier mobility
