Patents



Heiko Frenzel, Alexander Lajn, Holger von Wenckstern and Marius Grundmann
Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu seiner Herstellung und Verwendung
Deutsche Patentanmeldung Nr. 10 2009 030 045.7-33

Journal Papers and Book Chapters

109
Friedrich-Leonhard Schein, Holger von Wenckstern, Heiko Frenzel, and Marius Grundmann
ZnO-based n-channel junction field-effect transistor with room-temperature fabricated p-type ZnCo₂O₄-gate
IEEE Electron Device Letters, in press (2012)

108
S. Müller, H. von Wenckstern, O. Breitenstein, J. Lenzner, M. Grundmann
Microscopic identification of hot spots in multi-barrier Schottky contacts on pulsed laser deposition grown zinc oxide thin films
IEEE Transact. Electr. Dev., in press (2012)

107
J.P. Richter, J. Kaden, M. Gnauck, C. Ronning, C.P. Dietrich, H. v. Wenckstern, M. Grundmann, J. Gutowski, T. Voss
Modal gain and its diameter dependence in single ZnO micro- and nanowires
Semicond. Sci. Technol. 27, 015005 (2011)

106
M. Schmidt, M. Ellguth, R. Karsthof, H. v. Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, F. C. C. Ling
On the T2 trap in zinc oxide thin films
phys. stat. sol. (b), published online (2011)

105
Michael Lorenz, Holger von Wenckstern, Marius Grundmann
Tungsten oxide as gate dielectric for highly transparent and temperature-stable zincoxide-based thin-film transistors
Adv. Mater. 23, 5383 (2011)

104
Zhipeng Zhang, Holger von Wenckstern, Matthias Schmidt, Marius Grundmann
Wavelength selective metal-semiconductor-metal photodetectors based on (Mg,Zn)O-heterostructures
Appl. Phys. Lett. 99, 083502 (2011)

103
F.J. Klüpfel, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann
Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors
J. Appl. Phys. 109, 074515 (2011)

102
Matthias Schmidt, Kerstin Brachwitz, Florian Schmidt, Martin Ellguth, Holger von Wenckstern, Rainer Pickenhain, Marius Grundmann, Gerhard Brauer, Wolfgang Skorupa
Nickel-related defects in ZnO - A deep-level transient spectroscopy and photo-capacitance study
phys. stat. sol (b) 248, 1949 (2011)

101
C.P. Dietrich, M. Lange, F.J. Klüpfel, H. von Wenckstern, R. Schmidt-Grund and M. Grundmann
Strain distribution in bent ZnO microwires
Appl. Phys. Lett. 98, 031105 (2011)

100
A. Lajn, T. Diez, F. Schein, H. Frenzel, H. von Wenckstern, M. Grundmann
Light and temperature stability of fully transparent ZnO-based inverter circuits
IEEE Electron Device Letters 32, 515 (2011)

99
C.P. Dietrich, M. Brandt, M. Lange, J. Kupper, T. Böntgen, H. von Wenckstern and M. Grundmann
Defect properties of ZnO and ZnO:P microwires
J. Appl. Phys. 109, 013712 (2011)

98
M. Lange, C.P. Dietrich, J. Zúniga-Pérez, H. von Wenckstern, M. Lorenz, M. Grundmann
MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies
J. Vac. Sci. Techol. A 29, 03A104 (2011)

97a
A. Lajn, M.Schmidt, H. v. Wenckstern, and M. Grundmann
Erratum to: Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO
J. Electron. Mater. 40, 477 (2011)

97
A. Lajn, M.Schmidt, H. v. Wenckstern, and M. Grundmann
Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO
J. Electron. Mater. 40, 473 (2011)

96
M. Brandt, H. von Wenckstern, M. Stölzel, H. Hochmuth, M. Lorenz, M. Grundmann
Semiconducting oxide heterostructures
Semicond. Sci. Technol. 26,014040 (2011)

95
M. Lorenz, Holger Hochmuth, Christoph Grüner, Helena Hilmer, Alexander Lajn, D. Spemann, Matthias Brandt, Jan Zippel, R. Schmidt-Grund, H. Von Wenckstern and Marius Grundmann
Oxide thin film heterostructures on large area, with flexible doping, low dislocation density and abrupt interfaces grown by Pulsed Laser Deposition
Laser Chemistry 2011, 140976 (27 pages), (Hindawi, New York, 2011)

2010


94
M. Lorenz, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann, P. Barquinha, R. Martins, E. Fortunato
Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
Appl. Phys. Lett. 97, 243506 (2010)

93
Dominik Lausch, Kai Petter, Ronny Bakowskie, Christian Czekalla, Jörg Lenzner, Holger von Wenckstern and Marius Grundmann
Identification of Pre-Breakdown Mechanism of Silicon Solar Cells at Low Reverse Voltages
Appl. Phys. Lett. 97, 073506 (2010)

92
Martin Ellguth, Matthias Schmidt, Rainer Pickenhain, Holger v. Wenckstern, Marius Grundmann
Characterization of point defects in ZnO thin films by optical deep level transient spectroscopy
phys. stat. sol. (b), doi: 10.1002/pssb.201046244, (2010)

91
B.Q. Cao, M. Lorenz, G. Zimmermann, C. Czekalla, M. Brandt, H. von Wenckstern, M. Grundmann
p-type Phosphorus Doped ZnO Wires for Optoelectronic Applications
in Nanowires, Paola Prete (ed.), pp. 117-132, ISBN: 978-953-7619-79-4

90
W. Anwand, G. Brauer, T.E. Cowan, V. Heera, H. Schmidt, W. Skorupa, H. von Wenckstern, G. Benndorf, M. Grundmann
Structural characterization of H plasma-doped ZnO single crystals by Hall measurements and photoluminescence studies
phys. stat. sol. (a) doi: 10.1002/pssa.201026311, (2010)

89
H. Frenzel, A. Lajn, H. von Wenckstern, M. Lorenz, F. Schein, Zh. Zhang, M. Grundmann
Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and their Application in Transparent Integrated Circuits
Adv. Materials (2010), doi: 10.1002/adma.201001375

88
Stefan Lautenschlaeger, Sebastian Eisermann, Michael N. Hofmann, Udo Roemer, Melanie Pinnisch, Andreas Laufer, Bruno K. Meyer, Holger von Wenckstern, Alexander Lajn, Florian Schmidt, Marius Grundmann, Juergen Blaesing and Alois Krost
Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers
J. Cryst. Growth 312, 2078 (2010)

87
H. Frenzel, A. Lajn, H. von Wenckstern and M. Grundmann
Ultrathin gate-contacts for MESFET devices: A new approach in transparent electronics
J. Appl. Phys. 107, 114515 (2010)

86
H. Frenzel, F. Schein, A. Lajn, H. von Wenckstern, and M. Grundmann
High-gain integrated inverters based on ZnO metal-semiconductor field-effect transistor technology
Appl. Phys. Lett. 96, 113502 (2010)

85
M. Brandt, H. von Wenckstern, G. Benndorf, M. Lange, C.P. Dietrich, C. Kranert, C. Sturm, R. Schmidt-Grund, H. Hochmuth, M. Lorenz, M. Grundmann, M.R. Wagner, M. Alic, C. Nenstiel and A. Hoffmann
Identification of a donor-related recombination channel in ZnO thin films
Phys. Rev. B 81, 073306 (2010)

84
M. Schmidt, M. Ellguth, F. Schmidt, Th. Lüder, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa
Defects in a nitrogen-implanted thin film
phys. stat. sol. (b) 247, 1220 (2010)

83
M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, H. von Wenckstern
Transparent Semiconducting Oxides: Materials and Devices
phys. stat. sol. (a) (available online)(2010)

82
R. Kaden, G. Wagner, C. Strum, R. Schmidt-Grund, H. von Wenckstern, A. Prager, K. Bente, M. Grundmann
Synthesis and physical properties of cylindrite micro tubes and lamellae
phys. stat. sol. (b) 247, 1335 (2010)

81
A. Lajn, H. v. Wenckstern, G. Benndorf, C. P. Dietrich, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann
Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films
J. Electron. Mater. 39, 595 (2010)

80
J.Chai, R.J. Mendelsberg, R.J. Reeves, J. Kennedy, H. von Wenckstern, M. Schmidt, M. Grundmann, K. Doyle, T.H. Myers, and S. M. Durbin
Identification of a Deep Acceptor Level in ZnO Due to Silver Doping
J. Electron. Mater. 39, 577 (2010)

79
Holger von Wenckstern, Stefan Müller, Gisela Biehne, Holger Hochmuth, Michael Lorenz and Marius Grundmann
Dielectric passivation of ZnO-based Schottky diodes
J. Electron. Mater. 39, 559 (2010)

78
Holger von Wenckstern, Kerstin Brachwitz, Matthias Schmidt, Christoph Dietrich, Martin Ellguth, Marko Stölzel, Michael Lorenz and Marius Grundmann
The E3 defect in MgZnO
J. Electron. Mater. 39, 584 (2010)

77
Michael Lorenz, Matthias Brandt, Martin Lange, Gabriele Benndorf, Holger von Wenckstern, Detlef Klimm, Marius Grundmann
Homoepitaxial Mg_xZn_1-xO (0 &le x &le 0.22) thin films grown by Pulsed Laser Deposition
Thin Solid Films 518, 4623 (2010)

76
C.P. Dietrich, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann
Donor-acceptor pair recombination in non-stoichiometric ZnO thin films
Sol. Stat. Comm. 150, 379 (2010)

75
J. Zippel, S. Heitsch, M. Stölzel, A. Müller, H. von Wenckstern, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann
Optical properties of homo- and heteroepitaxial ZnO/Mg_xZn_1-xO quantum wells grown by pulsed laser deposition
J. Luminescence 130, 520 (2010)

74
H. von Wenckstern, Z. P. Zhang, M. Lorenz, C. Czekalla, H. Frenzel, A. Lajn and M. Grundmann
Light beam induced current measurements on ZnO Schottky diodes and MESFETs
Zinc Oxide and Related Materials - 2009, edited by Steve Durbin, Li-Chyong Chen, Martin Allen, and Holger von Wenckstern (Mater. Res. Soc. Symp. Proc. Volume 1201, Warrendale, PA, 2010), 1201-H04-02

73
Christof Peter Dietrich, Alexander Müller, Marko Stölzel, Martin Lange, Gabriele Benndorf, Holger von Wenckstern, Marius Grundmann
Bound-exciton recombination in Mg_xZn_1-xO thin films
Zinc Oxide and Related Materials - 2009, edited by Steve Durbin, Li-Chyong Chen, Martin Allen, and Holger von Wenckstern (Mater. Res. Soc. Symp. Proc. Volume 1201, Warrendale, PA, 2010), 1201-H03-08

72
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern, F. Schein, M. Lorenz
ZnO-based MESFET Devices
Zinc Oxide and Related Materials - 2009, edited by Steve Durbin, Li-Chyong Chen, Martin Allen, and Holger von Wenckstern (Mater. Res. Soc. Symp. Proc. Volume 1201, Warrendale, PA, 2010), 1201-H01-01

71
Heiko Frenzel, Holger von Wenckstern, Alexander Lajn, Matthias Brandt, Gisela Biehne, Holger Hochmuth, Michael Lorenz and Marius Grundmann
Interface effects in ZnO metal-insulator-semiconductor- and metal semiconductor-strutures
AIP Conf. Proc. 1199, 469 (2010)

70
Holger von Wenckstern, Alexander Lajn, Andreas Laufer, Bruno K. Meyer, Holger Hochmuth, Michael Lorenz and Marius Grundmann
Ag related defect state in ZnO thin films
AIP Conf. Proc. 1199, 122 (2010)

69
H. von Wenckstern, J. Zippel, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz and M. Grundmann
Two-dimensional electron gases in MgZnO/ZnO heterostructures
AIP Conf. Proc. 1199, 99 (2010)


2009


68
H. von Wenckstern, H. Schmidt, M. Brandt, A. Lajn, R. Pickenhain, M. Lorenz, M. Grundmann, D.M. Hofmann, A. Polity, B.K. Meyer, H. Saal, M. Binnewies, A. Börger, K.-D. Becker, V.A. Tikhomirov, K. Jug
Anionic and cationic substitution in ZnO
Prog. Sol. Stat. Chem. 37, 153-172 (2009).

67
Michael Binnewies, Sonja Locmelis, Bruno Meyer, Angelika Polity, Detley M. Hofmann, Holger von Wenckstern
Gas phase synthesis of ionic solid solutions-crystalline bulk materials and thin films
Prog. Sol. Stat. Chem. 37, 57-69 (2009).

66
R. Bakowskie, H. von Wenckstern, D. Lausch, M. Müller, K. Petter, M. Grundmann
Thermal admittance spectroscopy of multicrystalline silicon wafers and solar cells
Proc. 24th European Photovoltaic Solar Energy Conference, 2DV.1.30

65
D. Lausch, K. Petter, R. Bakowskie, H. von Wenckstern, M. Grundmann
Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells
Proc. 24th European Photovoltaic Solar Energy Conference, 2DV.1.17

64
H. Frenzel, M. Lorenz jr., A. Lajn, H. v. Wenckstern, G. Biehne, H. Hochmuth, and M. Grundmann
ZnO-based metal-semiconductor field-effect transistors on glass substrates
Appl. Phys. Lett. 95, 153503 (2009).

63
Martin W. Allen, Steven M. Durbin, Xiaojun Weng, Joan M. Redwing, K. Sarpatwari, Suzanne E. Mohney, Holger von Wenckstern, and Marius Grundmann
Temperature-Dependent Properties of Nearly Ideal ZnO Schottky Diodes
IEEE Transaction on Electron Devices 56, 2160-2164 (2009)

62
Dominik Lausch, Kai Petter, Holger von Wenckstern, Marius Grundmann
Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells
phys. stat. sol. RRL 3, 70 (2009)

61
Matthias Brandt, Holger von Wenckstern, Gabriele Benndorf, Holger Hochmuth, Michael Lorenz, Marius Grundmann
Formation of a two-dimensional electron gas in in ZnO/MgZnO single heterostructures and quantum wells
Thin Solid Films 518, 1048 (2009)

60
H. Frenzel, A. Lajn, M. Brandt, H. von Wenckstern, G. Biehne, H. Hochmuth, and M. Grundmann
ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates
Thin Solid Films 518, 1119 (2009)

59
A. Lajn, H. von Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Künzel, C. Vogt, R. Deneke
Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO
J. Vac. Sci. Technol. B 27, 1769 (2009)

58
M. Brandt, H. von Wenckstern, C. Dietrich, G. Benndorf, J. Zippel, A. Abdullah, C. Meinecke, T. Butz, H. Hochmuth, M. Lorenz, M. Grundmann
Dopant activation in homoepitaxial MgZnO:P thin films
J. Vac. Sci. Technol. B 27, 1604 (2009)

57
M. Schmidt, M. Ellguth, C. Czekalla, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa, M. Helm, Q. Gu, Ch.Ch. Ling
Defects in Zinc implanted ZnO thin films
J. Vac. Sci. Technol. B 27, 1597 (2009)

56
M. Lorenz, B. Cao, G. Zimmermann, G. Biehne, C. Czekalla, H. Frenzel, M. Brandt, H. von Wenckstern, M. Grundmann
Stable p-type ZnO:P nanowire / n-type ZnO:Ga film junctions, reproducibly grown by two-step pulsed laser deposition
J. Vac. Sci. Technol. B 27, 1693 (2009)

55
M. Lorenz, M. Brandt, G. Wagner, H. Hochmuth, G. Zimmermann, H. von Wenckstern and M. Grundmann
MgZnO:P homoepitaxy by pulsed laser deposition: pseudomorphic layer-by-layer growth and high electron mobility
Proc. SPIE 7217, 72170N (2009)


2008


54
M. Brandt, H. von Wenckstern, H. Schmidt, A. Rahm, G. Biehne, G. Benndorf, H. Hochmuth, M. Lorenz, C. Meinecke, T. Butz and M. Grundmann
High electron mobility of phosphorous doped homoepitaxial ZnO thin films grown by pulsed laser deposition
J. Appl. Phys. 104, 013708 (2008)

53
M. Lorenz, G. Wagner, A. Rahm, H. Schmidt, H. Hochmuth, H. Schmid, W. Mader, M. Brandt, H. von Wenckstern, M. Grundmann
Homoepitaxial ZnO thin films by PLD: Structural properties
phys. stat. sol. (c) 5, 3280 (2008)

52
H. Frenzel, A. Lajn, M. Brandt, H. v. Wenckstern, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann
ZnO metal-semiconductor field-effect transistors with Ag-Schottky-gates
Appl. Phys. Lett. 92, 192108 (2008)

51
H. von Wenckstern, H. Hochmuth, G Biehne, M. Lorenz, M. Grundmann, F. D. Auret, W. E. Meyer, P. J. J. van Rensburg, M. Hayes, J. M. Nel
Dependence of trap concentrations in ZnO thin films on annealing conditions
J. Korean Phys. Soc. 53, 3064 (2008)

50
Holger von Wenckstern, Matthias Brandt, Heidemarie Schmidt, Christian Hanisch, Gabriele Benndorf, Holger Hochmuth, Michael Lorenz, Marius Grundmann
Homoepitaxial ZnO thin films by pulsed-laser deposition
J. Korean Phys. Soc. 53, 2861 (2008)

49
H. von Wenckstern, M. Brandt, H. Schmidt, G. Benndorf, J. Zippel, H. Hochmuth,M. Lorenz, M. Grundmann
Properties of homoepitaxial ZnO and ZnO:P thin films grown by pulsed-laser deposition
Proc. SPIE 6895, 689505 (2008)

48
F. D. Auret, W. E. Meyer, P. J. Janse van Rensburg, M. Hayes, J. M. Nel, H. von Wenckstern, G. Biehne, M. Lorenz, M. Grundmann,
Electronic properties of shallow level defects in ZnO grown by pulsed laser deposition
J. Phys.: Conf. Ser. 100, 042038 (2008)

47
Martin Allen, Holger von Wenckstern, Marius Grundmann, Stuart Hatfield, Paul Jefferson, Philip King, Timothy Veal, Chris McConville, Steven Durbin
Mechanisms in the Formation of High Quality Schottky Contacts to n-type ZnO
Mater. Res. Soc. Symp. Proc. 1035E, Warrendale, PA, 2008), 1035-L10-06 (2008)

46
B. Q. Cao, M. Lorenz, A. Rahm, H. von Wenckstern, C. Czekalla, J. Lenzner, G. Benndorf and M. Grundmann
p-type conducting ZnO:P microwires prepared by direct carbothermal growth
phys. stat sol. (RRL) 2, 37 (2008)


2007

45
F. Danie Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel, Holger von Wenckstern, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 meV and 370 meV below the conduction band
Physica B 401-402, 378 (2007)

44
B. Cao, M. Lorenz, M. Brandt, H. von Wenckstern, J. Lenzner, G. Biehne, M. Grundmann
Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition
Nanotechnology 18, 455707 (2007)

43
H. Frenzel, H. v. Wenckstern, A. Weber, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann
Photocurrent spectroscopy of deep levels in ZnO thin films
Phys. Rev. B 76, 035214 (2007)

42
H. von Wenckstern, H. Schmidt, M. Grundmann, M. W. Allen, P. Miller, R. J. Reeves, and S. M. Durbin
Defects in hydrothermally grown bulk ZnO
Appl. Phys. Lett. 91, 022913 (2007)

41
H. von Wenckstern, H. Schmidt, C. Hanisch, M. Brandt, C. Czekalla, G. Benndorf, G. Biehne, A. Rahm, H. Hochmuth, M. Lorenz, and M. Grundmann
Homoepitaxy of ZnO by Pulsed-Laser Deposition
phys.stat.sol. (RRL) 1, No. 4, 129-131 (2007)

40
Holger von Wenckstern, Matthias Brandt, Gregor Zimmermann, Jörg Lenzner, Holger Hochmuth, Michael Lorenz, Marius Grundmann
Temperature dependent Hall measurements on PLD thin films
in Zinc Oxide and Related Materials, edited by Jürgen Christen, Chennupati Jagadish, David C. Look, Takafumi Yao, and Frank Bertram (Mater. Res. Soc. Symp. Proc. 957, Warrendale, PA, 2007), 0957-K03-02

39
Marius Grundmann, Andreas Rahm, Thomas Nobis, Holger von Wenckstern, Christian Czekalla, Jörg Lenzner, Michael Lorenz
Growth and Characterization of Optical and Electrical Properties of ZnO Nano- and Microwires
in Zinc Oxide and Related Materials, edited by Jürgen Christen, Chennupati Jagadish, David C. Look, Takafumi Yao, and Frank Bertram (Mater. Res. Soc. Symp. Proc. 957, Warrendale, PA, 2007), 0957-K06-09

38
G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, H. von Wenckstern, M. Brandt, M. Lorenz, and M. Grundmann
Defects in N⁺ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect
phys.stat.sol. (c) 4, No. 10, 3642 (2007)

37
Chris Sturm, Rüdiger Schmidt-Grund, Ronny Kaden, Holger von Wenckstern, Bernd Rheinländer, Klaus Bente, Marius Grundmann
Optical Properties of Cylindrite
Proc. Int. Conf. on the Physics of Semiconductors (ICPS-28), Wien, Austria, 2006, W. Jantsch, F. Schäffler, eds.; AIP Conf. Proc. 893, 1483 (2007) (in press)

36
H. Frenzel, H. v. Wenckstern, A. Weber, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Measurement of deep intrinsic defects in thin ZnO films via mid-infrared photocurrent spectroscopy
Proc. Int. Conf. on the Physics of Semiconductors (ICPS-28), Wien, Austria, 2006, W. Jantsch, F. Schäffler, eds.; AIP Conf. Proc. 893, 301 (2007) (in press)

35
H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann, and G. Brauer
Investigation of acceptor states in ZnO by junction DLTS
Superlattices and Microstructures 42, 14 (2007).

34
G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, M. Grundmann
Comparative characterization of differently grown ZnO single crystals by positron annihilation and Hall effect
Superlattices and Microstructures 42, 259 (2007).

33
Mariana Ungureanu, Heidemarie Schmidt, Qingyu Xu, Holger von Wenckstern, Daniel Spemann, Holger Hochmuth, Michael Lorenz and Marius Grundmann
Electrical and magnetic properties of RE-doped ZnO thin films (RE = Gd, Nd)
Superlattices and Microstructures 42,231 (2007).

32
Michael Lorenz, Matthias Brandt, Jürgen Schubert, Holger Hochmuth, Holger von Wenckstern, Mathias Schubert, and Marius Grundmann
Polarization coupling in epitaxial ZnO / BaTiO3 thin film heterostructures on SrTiO3 (100) substrates
Proc. SPIE Vol. 6474, 64741S (Feb. 20, 2007)
 

31
H. Schmidt, M. Diaconu, H. Hochmuth, G. Benndorf, H. von Wenckstern, G. Biehne, M. Lorenz, and M. Grundmann
Electrical and optical spectroscopy on ZnO:Co thin films
Appl. Phys. A, 88, 157 (2007)

 

30
H. von Wenckstern, M. Brandt, H. Schmidt, G. Biehne, R. Pickenhain, H. Hochmuth, M. Lorenz, M. Grundmann
Donor like defects in ZnO substrate materials and ZnO thin films
Appl. Phys. A, 88, 135 (2007)

 

29
H. von Wenckstern, G. Benndorf, S. Heitsch, J. Sann, M. Brandt, H.Schmidt, J. Lenzner, M. Lorenz, A. Yu. Kuznetsov, B.K. Meyer, M.Grundmann
Properties of P-doped ZnO
Appl. Phys. A, 88, 125 (2007)

 

28
R. Johne, M. Lorenz, H. Hochmuth, J. Lenzner, H. von Wenckstern, G. Zimmermann, H. Schmidt, R. Schmidt-Grund, M. Grundmann
Cathodoluminescence of large-area PLD grown ZnO thin films measured in transmission and reflection
Appl. Phys. A, 88, 89 (2007)


2006

27
Holger von Wenckstern, Rainer Pickenhain, Heidemarie Schmidt, MatthiasBrandt, Gisela Biehne, Michael Lorenz, Marius Grundmann and Gerhard Brauer
Deep acceptor states in ZnO single crystals
Appl. Phys. Lett. 89, 092122 (2006).


26
G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, C.Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, and M. Grundmann
Defects in virgin and N-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy
Phys. Rev. B 74, 045208 (2006).


25
M. Diaconua, H. Schmidt, H. Hochmuth, M. Lorenz, G. Benndorf, D.Spemann, A. Setzer, P. Esquinazi, A. Pöppl, H. von Wenckstern, K.-W.Nielsen, R. Gross, H. Schmid, W. Mader, G. Wagner and M. Grundmann
Room-temperature ferromagnetic Mn-alloyed ZnO films obtained by pulsed laser deposition
J. of Magnetism and Magnetic Materials 307, 212 (2006).


24
M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, H. von Wenckstern, G. Biehne, D. Spemann and M. Grundmann
Deep defects generated in n-conducting ZnO:TM thin films
Solid State Commun.137, 417 (2006).


23
Holger von Wenckstern, Gisela Biehne, R. Abdel Rahman, Holger Hochmuth, Michael Lorenz, and Marius Grundmann
Mean barrier height of Pd Schottky contacts on ZnO thin films
Appl. Phys. Lett. 88, 092102 (2006).


2005


22
M. Grundmann, H. v. Wenckstern, R. Pickenhain, Th. Nobis, A. Rahm, M. Lorenz
Electrical Properties of ZnO Thin Films and Optical Properties of ZnO-based Nanostructures
Superlattices and Microstructures, Volume 38, Issues 4-6, October-December 2005, Pages 317-328.


21
Michael Lorenz, Holger Hochmuth, Jörg Lenzner, Matthias Brand,Holger von Wenckstern, Gabriele Benndorf, Marius Grundmann
ZnO thin films grown by pulsed laser deposition on 6H-SiC single crystals
Proceedings HET-SiC-05, Krippen, Germany, April 26 - May 01, 2005.


20
M. Grundmann, H. v. Wenckstern
Electrical Properties of ZnO Thin Films
Proc. FVS-Workshop: TCOs für Dünnschichtsolarzellen und andere Anwendungen


19
Michael Lorenz, Holger Hochmuth, Daniel Spemann, Holger von Wenckstern, Heidemarie Schmidt, Marius Grundmann
ZnO-Dünnfilme gezüchtet mit Laserplasma-Abscheidung (PLD) - Forschungsstand und Anwendungen
Proc. FVS-Workshop: TCOs für Dünnschichtsolarzellen und andere Anwendungen


18
C. Bundesmann, M. Schubert, H. v. Wenckstern, M. Lorenz, M. Grundmann
Optische Bestimmung der Eigenschaften freier Ladungsträger in ZnO-Dünnfilmen mittels spektroskopischer Infrarotellipsometrie
Proc. FVS-Workshop: TCOs für Dünnschichtsolarzellen und andere Anwendungen


17
H. v. Wenckstern, Swen Weinhold, Gisela Biehne, Rainer Pickenhain, Heidemarie Schmidt, Holger Hochmuth, and Marius Grundmann
Donor levels in ZnO
Advances in Solid State Physics, Volume 45, Sep 2005, Pages 263 - 274


16
M. Lorenz, H. Hochmuth, J. Lenzner, T. Nobis, G. Zimmermann, M. Diaconu, H. Schmidt, H. von Wenckstern, M. Grundmann
Room-temperature luminescence of n-type ZnO thin films grown by pulsed-laser deposition in N₂, N₂O, and O₂ background gas
Thin Solid Films 486, 205 (2005).


15
N. Ashkenov, M. Schubert, E. Twerdowski, B. N. Mbenkum, H. Hochmut, M. Lorenz, H. v. Wenckstern,W. Grill, and M. Grundmann
Asymmetric ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures
Thin Solid Films 486, 153 (2005).


14
Holger v. Wenckstern, Rainer Pickenhain, Swen Weinhold, Michael Ziese, Pablo Esquinazi, Marius Grundmann
Electrical properties of Ni/GaAs and Au/GaAs Schottky contacts in high magnetic fields
AIP Conference proceedings 772, 1333 (2005).
(Proceedings of the 27th International Conference on the Physics of Semiconductors , Flagstaff, AZ, USA, 2004)


13
H. Schmidt, M. Diaconu, E. Guzman, H. Hochmuth, M. Lorenz , G. Benndorf, A. Setzer, P. Esquinazi, H. v. Wenckstern,D. Spemann, A. Pöppl, R. Böttcher, M. Grundmann
N-conducting, ferromagnetic Mn-doped ZnO thin films on sapphire substrates
AIP Conference proceedings 772, 351 (2005).
(Proceedings of the 27th International Conference on the Physics of Semiconductors , Flagstaff, AZ, USA, 2004)


12
H. v. Wenckstern, S. Weinhold, G. Biehne, R. Pickenhain, E. M. Kaidashev, M. Lorenz, and M. Grundmann
Static and transient capacitance spectroscopy on ZnO
AIP Conference proceedings 772, 197 (2005).
(Proceedings of the 27th International Conference on the Physics of Semiconductors , Flagstaff, AZ, USA, 2004)


11
H. von Wenckstern, S. Heitsch, G. Benndorf, D. Spemann, E. M. Kaidashev, M. Lorenz,and M. Grundmann
Incorporation and Electrical Activity of Group V Acceptors in ZnO Thin Films
AIP Conference proceedings 772, 183 (2005).
(Proceedings of the 27th International Conference on the Physics of Semiconductors , Flagstaff, AZ, USA, 2004)


10
M. Grundmann, H. v. Wenckstern, R. Pickenhain, S. Weinhold, B. Chengnui, O. Breitenstein
Electrical properties of ZnO thin films and single crystals
Proc. of the NATO Advanced Research Workshop on ZnO as a material for micro-and optoelectronic applications, N.H. Nickel, E. Terukov, eds., Series: NATO Science Series II: Mathematics,Physics and Chemistry, Vol. 194 (Kluwer, 2005), ISBN 1-4020-3474-1


2004


9
M. Schubert, N. Ashkenov, T. Hofmann, M. Lorenz, H. Hochmuth, H. v. Wenckstern, M. Grundmann, G. Wagner
Electro-optical properties of ZnO-BaTiO3-ZnO heterostructures grown by pulsed-laser deposition
Annalen der Physik 13, 61 (2004).


8
E. Guzman, H. Hochmuth, M. Lorenz, H. von Wenckstern, A. Rahm, E.M. Kaidashev, M. Ziese, A. Setzer,P. Esquinazi, A. Pöppl, D. Spemann, R. Pickenhain, H. Schmidt, M. Grundmann
Pulsed laser deposition of Fe- and Fe, Cu-doped ZnO thin films
Annalen der Physik 13, 57 (2004).


7
M. Schubert, C. Bundesmann, H. v. Wenckstern, G. Jakopic, A. Haase, N.-K. Persson, F. Zhang, H. Arwin, O. Inganäs
Carrier redistribution in organic/inorganic (PEDOT/PSS - Si) heterojunction
Appl. Phys. Lett. 84, 1311-1313 (2004).


6
H. von Wenckstern, E. M. Kaidashev, M. Lorenz, H. Hochmuth, G. Biehne, J. Lenzner, V. Gottschalch, R. Pickenhain, M. Grundmann
Lateral homogeneity of Schottky contacts on n-type ZnO
Appl. Phys. Lett. 84, 79 (2004).


5
C. Bundesmann, N. Ashkenov, M. Schubert, A. Rahm, H. v. Wenckstern, E. M. Kaidashev, M. Lorenz, M. Grundmann
Infrared dielectric functions and crystal orientation of a-planeZnO thin films on r-plane sapphire determined by generalized ellipsometry
Thin Solid Films 455-456, 161-166 (2004).


2003


4
E. M. Kaidashev, M. Lorenz, H. von Wenckstern, J. Lenzner, G. Benndorf,A. Rahm, H.-C. Semmelhack, K.-H. Han, H. Hochmuth, C. Bundesmann, V.Riede, M. Grundmann
High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition
Appl. Phys. Lett. 82, 3901 (2003).


3
M. Lorenz, E. M. Kaidashev, H. von Wenckstern, V. Riede, C. Bundesmann,D. Spemann, G. Benndorf, H. Hochmuth, A. Rahm, H.-C. Semmelhack, M.Grundmann
Optical and electrical properties of epitaxial (Mg, Cd)xZn1-xO,ZnO, and ZnO:(Ga, Al) thin films on c-plane sapphire grown by pulsed-laser deposition
Solid State Electronics 47, 2205 (2003).


2002


2
H. v. Wenckstern, H. Schmidt, R. Pickenhain, M. Grundmann
Conduction band offset of pseudomorphic InAs/GaAs determined by capacitance spectroscopy
Proceedings of the 26th Int. Conf. on the Physics of Semiconductors,Edinburgh (ICPS-26), Institute of Physics Conference Series 171, H12(IoP Publishing, Bristol, 2002), ISBN 0-7503-0924-5


1
H. von Wenckstern, H. Schmidt, R. Pickenhain, and V. Gottschalch
Quantum Confined Stark Effect of Excitons Localized at Very Thin InAs Layers Embedded in GaAs
phys. stat. sol. (a) 190, No. 3, 709 (2002).